Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP

Yoshihiro Kangawa, Chikako Kojima, Noriyuki Kuwano, Kensuke Oki

Research output: Contribution to journalArticle

Abstract

We have studied the morphology of antiphase boundaries (APBs) and their formation mechanism in CuAu-I type ordered InGaAs grown on a vicinal (110)InP substrate. In InGaAs grown at 380°C, APBs are formed parallel to (110) by the flow of one-monolayer steps. In InGaAs grown at 450°C, the normal directions of APBs arc slightly tilted toward [011] or [001] from (110) and some APBs show a hairpin shape. New formation mechanisms of these APBs are proposed.

Original languageEnglish
Pages (from-to)40-41
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1
DOIs
Publication statusPublished - Jan 1 1999

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antiphase boundaries
Molecular beam epitaxy
Monolayers
molecular beam epitaxy
Substrates
arcs

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP. / Kangawa, Yoshihiro; Kojima, Chikako; Kuwano, Noriyuki; Oki, Kensuke.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 1, 01.01.1999, p. 40-41.

Research output: Contribution to journalArticle

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