Formation mechanism of twin boundaries during crystal growth of silicon

Kentaro Kutsukake, Takuro Abe, Noritaka Usami, Kozo Fujiwara, Kohei Morishita, Kazuo Nakajima

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force.

Original languageEnglish
Pages (from-to)556-559
Number of pages4
JournalScripta Materialia
Volume65
Issue number6
DOIs
Publication statusPublished - Sep 1 2011
Externally publishedYes

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Silicon
Crystallization
Crystal growth
crystal growth
silicon
Crystals
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Formation mechanism of twin boundaries during crystal growth of silicon. / Kutsukake, Kentaro; Abe, Takuro; Usami, Noritaka; Fujiwara, Kozo; Morishita, Kohei; Nakajima, Kazuo.

In: Scripta Materialia, Vol. 65, No. 6, 01.09.2011, p. 556-559.

Research output: Contribution to journalArticle

Kutsukake, Kentaro ; Abe, Takuro ; Usami, Noritaka ; Fujiwara, Kozo ; Morishita, Kohei ; Nakajima, Kazuo. / Formation mechanism of twin boundaries during crystal growth of silicon. In: Scripta Materialia. 2011 ; Vol. 65, No. 6. pp. 556-559.
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