Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita, K. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages810-811
Number of pages2
DOIs
Publication statusPublished - Dec 20 2010
Externally publishedYes
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Crystal growth
Silicon
Boundary conditions
Cooling
Crystals
Microstructure
Experiments

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Kutsukake, K., Abe, T., Usami, N., Fujiwara, K., Morishita, K., & Nakajima, K. (2010). Formation mechanism of twin boundaries in silicon multicrystals during crystal growth. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 810-811). [5617200] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5617200

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth. / Kutsukake, K.; Abe, T.; Usami, N.; Fujiwara, K.; Morishita, K.; Nakajima, K.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 810-811 5617200 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kutsukake, K, Abe, T, Usami, N, Fujiwara, K, Morishita, K & Nakajima, K 2010, Formation mechanism of twin boundaries in silicon multicrystals during crystal growth. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5617200, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 810-811, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5617200
Kutsukake K, Abe T, Usami N, Fujiwara K, Morishita K, Nakajima K. Formation mechanism of twin boundaries in silicon multicrystals during crystal growth. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 810-811. 5617200. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5617200
Kutsukake, K. ; Abe, T. ; Usami, N. ; Fujiwara, K. ; Morishita, K. ; Nakajima, K. / Formation mechanism of twin boundaries in silicon multicrystals during crystal growth. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 810-811 (Conference Record of the IEEE Photovoltaic Specialists Conference).
@inproceedings{76a5bd7fc6084fe7b7fb8362f3090a96,
title = "Formation mechanism of twin boundaries in silicon multicrystals during crystal growth",
abstract = "Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.",
author = "K. Kutsukake and T. Abe and N. Usami and K. Fujiwara and K. Morishita and K. Nakajima",
year = "2010",
month = "12",
day = "20",
doi = "10.1109/PVSC.2010.5617200",
language = "English",
isbn = "9781424458912",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "810--811",
booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

}

TY - GEN

T1 - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

AU - Kutsukake, K.

AU - Abe, T.

AU - Usami, N.

AU - Fujiwara, K.

AU - Morishita, K.

AU - Nakajima, K.

PY - 2010/12/20

Y1 - 2010/12/20

N2 - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.

AB - Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.

UR - http://www.scopus.com/inward/record.url?scp=78650154100&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650154100&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2010.5617200

DO - 10.1109/PVSC.2010.5617200

M3 - Conference contribution

AN - SCOPUS:78650154100

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 810

EP - 811

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

ER -