TY - JOUR
T1 - Formation mechanisms for the dominant kinks with different angles in InP nanowires
AU - Zhang, Minghuan
AU - Wang, Fengyun
AU - Wang, Chao
AU - Wang, Yiqian
AU - Yip, Sen Po
AU - Ho, Johnny C.
N1 - Funding Information:
The work is financially supported by National Key Basic Research Development Program of China (grant no. 2012CB722705), the Natural Science Foundation for Outstanding Young Scientists in Shandong Province, China (grant no. JQ201002), the Program for Foreign Cultural and Educational Experts (grant nos. W20123702084, W20133702021), and the Early Career Scheme of the Research Grants Council of Hong Kong SAR, China (grant no. CityU139413). YQW would like to thank the financial support from the Top-notch Innovative Talents Program of Qingdao City and the Taishan Scholar Program of Shandong Province, China.
PY - 2014
Y1 - 2014
N2 - The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties. PACS: 81.07.-b; 81.05.Ea; 81.07.Gf
AB - The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties. PACS: 81.07.-b; 81.05.Ea; 81.07.Gf
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U2 - 10.1186/1556-276X-9-211
DO - 10.1186/1556-276X-9-211
M3 - Article
AN - SCOPUS:84903940139
SN - 1931-7573
VL - 9
SP - 1
EP - 7
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 211
ER -