Formation of β-FeSi2 by ion implantation of 90 keV Fe 10+ ions on N-type silicon

P. V. Rajesh, S. P. Pati, J. B.M. Krishna, B. Ghosh, D. Das

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The semiconducting disilicide of the Fe-Si binary system β-FeSi 2 has been synthesized by the Ion Beam Synthesis (IBS) technique. High purity n-type float zone silicon wafers have been irradiated at various fluences from 5×1015 to 1×1017 by Fe 10+ beam at 90 keV using a ECR based low energy ion beam implanter. The irradiated samples were annealed in pure argon ambient at 900°C for 1 hour. GIXRD measurements were done at 0.5 degree incidence on the irradiated samples and the beta phase was identified. Raman measurements confirm the existence of β-FeSi2. In addition to the semiconducting β-FeSi2 phase, the sample irradiated with the highest dose contains the metallic alpha phase. The transition from beta to alpha phase observed in the sample that is annealed at relatively lower temperature has been assigned to the presence of lattice defects.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Pages1051-1052
Number of pages2
Edition1
DOIs
Publication statusPublished - 2012
Event56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India
Duration: Dec 19 2011Dec 23 2011

Publication series

NameAIP Conference Proceedings
Number1
Volume1447
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other56th DAE Solid State Physics Symposium 2011
Country/TerritoryIndia
CityKattankulathur, Tamilnadu
Period12/19/1112/23/11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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