Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Tanemasa Asano, Hiroshi Ishiwara

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures have been formed by conventional vacuum deposition of CaF2 and Si. Optimum conditions for obtaining good epitaxial films have been investigated by changing Si substrate orientations, film thicknesses, and substrate temperatures during film deposition. It has been found from Rutherford backscattering and channeling spectroscopy (RBS) that the crystalline quality of CaF2 films grown on Si (111) and (110) substrates is excellent, but that the quality of the films on Si (100) is much worse. It has also been found from RBS and TEM (transmission electron microscopy) that single-crystalline Si films are formed on the CaF2/Si (111) structure at substrate temperature of 700C. Finally, etching characteristics ofCaF2 and Si films have been studied. It has been shown that the CaF2 and Si films are selectively etched by the wet and dry plasma processes.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Volume21
DOIs
Publication statusPublished - Jan 1 1982

Fingerprint

Vacuum deposition
vacuum deposition
insulators
Rutherford backscattering spectroscopy
Substrates
Spectroscopy
backscattering
Crystalline materials
Epitaxial films
Film thickness
Etching
spectroscopy
film thickness
Transmission electron microscopy
Plasmas
Temperature
etching
transmission electron microscopy
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si. / Asano, Tanemasa; Ishiwara, Hiroshi.

In: Japanese Journal of Applied Physics, Vol. 21, 01.01.1982.

Research output: Contribution to journalArticle

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