Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Physics

• Spectroscopy 40%
• Spectrometer 40%
• Vacuum Deposition 40%
• Backscattering 40%
• Substrates 20%
• Quality 20%
• Film Thickness 20%
• Etching 20%
• Insulators 20%
• Transmission Electron Microscopy 20%

Engineering

• Plasma Process 60%
• Substrate Temperature 40%
• Channelings 40%
• Substrates 20%
• Characteristics 20%
• Epitaxial Film 20%
• Si Substrate 20%
• Optimum Condition 20%
• Crystalline Quality 20%

Material Science

• Liquid Films 100%
• Film Deposition 20%
• Crystalline Material 20%
• Epitaxial Film 20%
• Etching 20%