FORMATION OF AND EPITAXIAL Si/INSULATOR/Si STRUCTURE BY VACUUM DEPOSITION OF CaF SUB (2) AND Si.

Research output: Contribution to conference › Paper › peer-review

All Science Journal Classification (ASJC) codes

TY - CONF

T1 - FORMATION OF AND EPITAXIAL Si/INSULATOR/Si STRUCTURE BY VACUUM DEPOSITION OF CaF SUB (2) AND Si.

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

PY - 1982/1/1

Y1 - 1982/1/1

UR - http://www.scopus.com/inward/record.url?scp=0019900329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019900329&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0019900329

SP - 187

EP - 191

ER -