FORMATION OF AND EPITAXIAL Si/INSULATOR/Si STRUCTURE BY VACUUM DEPOSITION OF CaF SUB (2) AND Si.

Tanemasa Asano, Hiroshi Ishiwara

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
Pages187-191
Number of pages5
Publication statusPublished - Jan 1 1982

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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