The CeO2 buffer layer was fabricated using the multi-plume pulsed laser deposition (PLD) method with different deposition rates controlled by the excimer laser energy and frequency on the Gd2Zr2O7 template tape formed by the ion-beam assisted deposition (IBAD) with 14° of Δφ (full width at half maximum (FWHM) value of X-ray diffraction φ-scan for Gd2Zr2O7 (2 2 2) pole). The laser conditions with high pulse energy and low frequency resulted in a highly textured in-plane grain alignment (Δφ). The surface roughness and Δφ values were improved by increasing the thickness of the CeO2 buffer layer. YBCO films with the thickness of 1 μm and 1.6 μm were further deposited by the advanced trifluoroacetates-metal organic deposition (TFA-MOD) on the CeO2 buffered substrates with the deposition rate of 0.15 and 0.5 μm/min. The Jc values of 2.5 MA/cm2 and 2 MA/cm2 were obtained, respectively. High Jc films could be deposited on the CeO2 buffer layer even at high deposition rate by the multi-plume deposition.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering