Formation of CoSi2 gate electrode for MOS electron tunneling emitters

Yi Qun Zhang, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Toshio Tsurushima

Research output: Contribution to journalArticlepeer-review

Abstract

We have evaluated the characteristics of 10 nm gate oxide films of MOS devices with CoSi2 gate electrodes. The CoSi2 layers were grown with the molecular beam deposition (MBD). Co and Si were simultaneously deposited with a beam intensity ratio of Co:Si = 1:2 at a temperature between room temperature and 400 °C. The capacitance-voltage measurement showed that the charge density in the oxide were 0.53×1011 to approximately 1.36×1011 cm-2. From the breakdown voltage histogram, it has been shown that the breakdown of the MOS samples with CoSi2-gate formed by 400 °C deposition occurred mainly above 8 MV cm-1. The results suggests that the electrical properties of the oxide films improve with increasing the deposition temperature of the CoSi2 layers between room temperature and 400 °C, owing to the decrease of the stress in the oxide films. The CoSi2 gate electrodes on the thin oxide films do not deteriorate the MOS properties.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume4
Issue number1
Publication statusPublished - Mar 1 1999

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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