Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting

Takashi Sakane; Kaoru Toko; Takanori Tanaka; Taizoh Sadoh; Masanobu Miyao

Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting

Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article

Abstract

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (〜1 μmφ) is proposed. As a result, single-crystalline GOI (111) structures with large area (〜10 μmφ) are realized. The Raman measurements show that the tensile strain (〜0.2 %) which enhances carrier mobility is induced in the growth regions. Moreover, the transmission electron microscopy observations reveal no defects in the grown regions. This new method is can be employed to realize the multi-functional SiGe-LSI.

Original language	English
Pages (from-to)	53-57
Number of pages	5
Journal	IEICE technical report
Volume	110
Issue number	15
Publication status	Published - Apr 16 2010

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http://id.ndl.go.jp/bib/10668394

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title = "Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting",

abstract = "Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (〜1 μmφ) is proposed. As a result, single-crystalline GOI (111) structures with large area (〜10 μmφ) are realized. The Raman measurements show that the tensile strain (〜0.2 %) which enhances carrier mobility is induced in the growth regions. Moreover, the transmission electron microscopy observations reveal no defects in the grown regions. This new method is can be employed to realize the multi-functional SiGe-LSI.",

author = "Takashi Sakane and Kaoru Toko and Takanori Tanaka and Taizoh Sadoh and Masanobu Miyao",

year = "2010",

month = apr,

day = "16",

language = "English",

volume = "110",

pages = "53--57",

journal = "IEICE technical report",

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publisher = "一般社団法人電子情報通信学会",

number = "15",

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TY - JOUR

T1 - Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting

AU - Sakane, Takashi

AU - Toko, Kaoru

AU - Tanaka, Takanori

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2010/4/16

Y1 - 2010/4/16

N2 - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (〜1 μmφ) is proposed. As a result, single-crystalline GOI (111) structures with large area (〜10 μmφ) are realized. The Raman measurements show that the tensile strain (〜0.2 %) which enhances carrier mobility is induced in the growth regions. Moreover, the transmission electron microscopy observations reveal no defects in the grown regions. This new method is can be employed to realize the multi-functional SiGe-LSI.

AB - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (〜1 μmφ) is proposed. As a result, single-crystalline GOI (111) structures with large area (〜10 μmφ) are realized. The Raman measurements show that the tensile strain (〜0.2 %) which enhances carrier mobility is induced in the growth regions. Moreover, the transmission electron microscopy observations reveal no defects in the grown regions. This new method is can be employed to realize the multi-functional SiGe-LSI.

M3 - Article

VL - 110

SP - 53

EP - 57

JO - IEICE technical report

JF - IEICE technical report

SN - 0913-5685

IS - 15

ER -