Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Kazuo Tsutsui, Seijiro Furukawa

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Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures (≤600°C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.

Original languageEnglish
Pages (from-to)L139-L141
JournalJapanese Journal of Applied Physics
Issue number2 A
Publication statusPublished - Feb 1986


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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