TY - JOUR
T1 - Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Lee, Hee Chul
AU - Tsutsui, Kazuo
AU - Furukawa, Seijiro
PY - 1986/2
Y1 - 1986/2
N2 - Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures (≤600°C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.
AB - Epitaxial GaAs layers have been grown on (100) and (111) oriented CaF2/Si structures by molecular beam epitaxy, and characterized mainly by ion channeling and cross-sectional transmission electron microscopy. GaAs films were found to grow epitaxially at conventional growth temperatures (≤600°C). GaAs films having better crystalline quality could be grown on (111) substrates, though the surface of these GaAs films was not flat. Planar defects were peculiarly observed in GaAs films grown on (100) substrates.
UR - http://www.scopus.com/inward/record.url?scp=0022663381&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022663381&partnerID=8YFLogxK
U2 - 10.1143/JJAP.25.L139
DO - 10.1143/JJAP.25.L139
M3 - Article
AN - SCOPUS:0022663381
SN - 0021-4922
VL - 25
SP - L139-L141
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 A
ER -