FORMATION OF GaAs-SOI ON Si SUBSTRATES BY USE OF FLUORIDE INSULATORS.

Tanemasa Asano, Hiroshi Ishiwara, Hee Chul Lee, Kazuo Tsutsui, Seijiro Furukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Epitaxial GaAs layers have been grown on composite CaF//2/Si structures by molecular beam epitaxy. Fundamental growth characteristics of GaAs films on (100) and (111) oriented substrates have been investigated. GaAs films were found to grow epitaxially at conventional growth temperatures (600 degree C). Epitaxial growth of GaAs on (100) substrates was observed at lower temperatures than the growth on (111) substrates. But the crystalline quality of GaAs films grown on (111) substrates was superior to that of the films grown on (100) substrates. GaAs films which had the quality comparable with a bulk GaAs crystal, as measured by ion channeling, were obtained on (111) substrates, though the surface morphology of the films was not satisfactory.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages217-220
Number of pages4
ISBN (Print)4930813107
Publication statusPublished - Dec 1 1985

Publication series

NameConference on Solid State Devices and Materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K., & Furukawa, S. (1985). FORMATION OF GaAs-SOI ON Si SUBSTRATES BY USE OF FLUORIDE INSULATORS. In Conference on Solid State Devices and Materials (pp. 217-220). (Conference on Solid State Devices and Materials). Japan Soc of Applied Physics.