Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationExtended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
PublisherIEEE Computer Society
Pages30-31
Number of pages2
DOIs
Publication statusPublished - 2013
Event2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: Jun 6 2013Jun 7 2013

Other

Other2013 13th International Workshop on Junction Technology, IWJT 2013
CountryJapan
CityKyoto
Period6/6/136/7/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Mizushima, I., Sadoh, T., & Miyao, M. (2013). Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. In Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013 (pp. 30-31). [6644498] IEEE Computer Society. https://doi.org/10.1109/IWJT.2013.6644498