Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationExtended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
PublisherIEEE Computer Society
Pages30-31
Number of pages2
DOIs
Publication statusPublished - 2013
Event2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: Jun 6 2013Jun 7 2013

Other

Other2013 13th International Workshop on Junction Technology, IWJT 2013
CountryJapan
CityKyoto
Period6/6/136/7/13

Fingerprint

Rapid thermal annealing
Melting

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Mizushima, I., Sadoh, T., & Miyao, M. (2013). Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. In Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013 (pp. 30-31). [6644498] IEEE Computer Society. https://doi.org/10.1109/IWJT.2013.6644498

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. / Mizushima, Ichiro; Sadoh, Taizoh; Miyao, Masanobu.

Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society, 2013. p. 30-31 6644498.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizushima, I, Sadoh, T & Miyao, M 2013, Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. in Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013., 6644498, IEEE Computer Society, pp. 30-31, 2013 13th International Workshop on Junction Technology, IWJT 2013, Kyoto, Japan, 6/6/13. https://doi.org/10.1109/IWJT.2013.6644498
Mizushima I, Sadoh T, Miyao M. Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. In Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society. 2013. p. 30-31. 6644498 https://doi.org/10.1109/IWJT.2013.6644498
Mizushima, Ichiro ; Sadoh, Taizoh ; Miyao, Masanobu. / Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique. Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society, 2013. pp. 30-31
@inproceedings{f983c9d61dfb40448296eccc5b032d2c,
title = "Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique",
author = "Ichiro Mizushima and Taizoh Sadoh and Masanobu Miyao",
year = "2013",
doi = "10.1109/IWJT.2013.6644498",
language = "English",
pages = "30--31",
booktitle = "Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013",
publisher = "IEEE Computer Society",
address = "United States",

}

TY - GEN

T1 - Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

AU - Mizushima, Ichiro

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84898636977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898636977&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2013.6644498

DO - 10.1109/IWJT.2013.6644498

M3 - Conference contribution

AN - SCOPUS:84898636977

SP - 30

EP - 31

BT - Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013

PB - IEEE Computer Society

ER -