Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation

Kouta Takahashi; Masashi Kurosawa; Hiroshi Ikenoue; Mitsuo Sakashita; Wakana Takeuchi; Osamu Nakatsuka; Shigeaki Zaima

doi:10.1109/IWJT.2015.7467063

Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation

Kouta Takahashi, Masashi Kurosawa, Hiroshi Ikenoue, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima

Faculty of Information Science and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.

Original language	English
Title of host publication	15th International Workshop on Junction Technology, IWJT 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8-10
Number of pages	3
ISBN (Electronic)	9784863485174
DOIs	https://doi.org/10.1109/IWJT.2015.7467063
Publication status	Published - May 9 2016
Event	15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, Japan Duration: Jun 11 2015 → Jun 12 2015

Publication series

Name	15th International Workshop on Junction Technology, IWJT 2015

Other

Other	15th International Workshop on Junction Technology, IWJT 2015
Country/Territory	Japan
City	Kyoto
Period	6/11/15 → 6/12/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/IWJT.2015.7467063

Cite this

Takahashi, K., Kurosawa, M., Ikenoue, H., Sakashita, M., Takeuchi, W., Nakatsuka, O., & Zaima, S. (2016). Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. In 15th International Workshop on Junction Technology, IWJT 2015 (pp. 8-10). [7467063] (15th International Workshop on Junction Technology, IWJT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2015.7467063

Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. / Takahashi, Kouta; Kurosawa, Masashi; Ikenoue, Hiroshi et al.

15th International Workshop on Junction Technology, IWJT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 8-10 7467063 (15th International Workshop on Junction Technology, IWJT 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takahashi, K, Kurosawa, M, Ikenoue, H, Sakashita, M, Takeuchi, W, Nakatsuka, O & Zaima, S 2016, Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. in 15th International Workshop on Junction Technology, IWJT 2015., 7467063, 15th International Workshop on Junction Technology, IWJT 2015, Institute of Electrical and Electronics Engineers Inc., pp. 8-10, 15th International Workshop on Junction Technology, IWJT 2015, Kyoto, Japan, 6/11/15. https://doi.org/10.1109/IWJT.2015.7467063

Takahashi K, Kurosawa M, Ikenoue H, Sakashita M, Takeuchi W, Nakatsuka O et al. Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. In 15th International Workshop on Junction Technology, IWJT 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 8-10. 7467063. (15th International Workshop on Junction Technology, IWJT 2015). doi: 10.1109/IWJT.2015.7467063

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title = "Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation",

abstract = "We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.",

author = "Kouta Takahashi and Masashi Kurosawa and Hiroshi Ikenoue and Mitsuo Sakashita and Wakana Takeuchi and Osamu Nakatsuka and Shigeaki Zaima",

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doi = "10.1109/IWJT.2015.7467063",

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AU - Takahashi, Kouta

AU - Kurosawa, Masashi

AU - Ikenoue, Hiroshi

AU - Sakashita, Mitsuo

AU - Takeuchi, Wakana

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

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N2 - We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.

AB - We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.

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Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation

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