Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation

Kouta Takahashi, Masashi Kurosawa, Hiroshi Ikenoue, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examined the formation of pn-junction didoes on Ge(100), Ge(110), and Ge(111) substrates by P-doping with immersion laser irradiation in phosphoric acid solution at RT. We achieved high-concentration phosphorus doping in all orientation, and the maximum concentrations of electrically activated P of 2.4×1019, 5.1×1019, and 9.8×1019 cm-3 for the Ge(100), Ge(110), and Ge(111) substrates, respectively, are obtained with 1000-times laser shots. On the other hand, the diffusion depth is significantly different with the orientation, which concerned with the melt depth.

Original languageEnglish
Title of host publication15th International Workshop on Junction Technology, IWJT 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8-10
Number of pages3
ISBN (Electronic)9784863485174
DOIs
Publication statusPublished - May 9 2016
Event15th International Workshop on Junction Technology, IWJT 2015 - Kyoto, Japan
Duration: Jun 11 2015Jun 12 2015

Publication series

Name15th International Workshop on Junction Technology, IWJT 2015

Other

Other15th International Workshop on Junction Technology, IWJT 2015
CountryJapan
CityKyoto
Period6/11/156/12/15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Takahashi, K., Kurosawa, M., Ikenoue, H., Sakashita, M., Takeuchi, W., Nakatsuka, O., & Zaima, S. (2016). Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation. In 15th International Workshop on Junction Technology, IWJT 2015 (pp. 8-10). [7467063] (15th International Workshop on Junction Technology, IWJT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2015.7467063