Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth

Ryo Matsumura, Hironori Chikita, Taizoh Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Rapid-melting growth of SiGe stripes on insulator without crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the self-organized formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.

Original languageEnglish
Title of host publicationQuantum, Nano, Micro Technologies and Applied Researches
Pages27-29
Number of pages3
DOIs
Publication statusPublished - Jan 16 2014
Event2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , Singapore
Duration: Dec 1 2013Dec 2 2013

Publication series

NameApplied Mechanics and Materials
Volume481
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
CountrySingapore
Period12/1/1312/2/13

Fingerprint

Melting
Rapid thermal annealing
Crystals
Melting point
Solidification
Seed
Grain boundaries
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Matsumura, R., Chikita, H., Sadoh, T., & Miyao, M. (2014). Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth. In Quantum, Nano, Micro Technologies and Applied Researches (pp. 27-29). (Applied Mechanics and Materials; Vol. 481). https://doi.org/10.4028/www.scientific.net/AMM.481.27

Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth. / Matsumura, Ryo; Chikita, Hironori; Sadoh, Taizoh; Miyao, M.

Quantum, Nano, Micro Technologies and Applied Researches. 2014. p. 27-29 (Applied Mechanics and Materials; Vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsumura, R, Chikita, H, Sadoh, T & Miyao, M 2014, Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth. in Quantum, Nano, Micro Technologies and Applied Researches. Applied Mechanics and Materials, vol. 481, pp. 27-29, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, Singapore, 12/1/13. https://doi.org/10.4028/www.scientific.net/AMM.481.27
Matsumura R, Chikita H, Sadoh T, Miyao M. Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth. In Quantum, Nano, Micro Technologies and Applied Researches. 2014. p. 27-29. (Applied Mechanics and Materials). https://doi.org/10.4028/www.scientific.net/AMM.481.27
Matsumura, Ryo ; Chikita, Hironori ; Sadoh, Taizoh ; Miyao, M. / Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth. Quantum, Nano, Micro Technologies and Applied Researches. 2014. pp. 27-29 (Applied Mechanics and Materials).
@inproceedings{5e81bab13f3341649c45071afc3083fb,
title = "Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth",
abstract = "Rapid-melting growth of SiGe stripes on insulator without crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the self-organized formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.",
author = "Ryo Matsumura and Hironori Chikita and Taizoh Sadoh and M. Miyao",
year = "2014",
month = "1",
day = "16",
doi = "10.4028/www.scientific.net/AMM.481.27",
language = "English",
isbn = "9783037859681",
series = "Applied Mechanics and Materials",
pages = "27--29",
booktitle = "Quantum, Nano, Micro Technologies and Applied Researches",

}

TY - GEN

T1 - Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth

AU - Matsumura, Ryo

AU - Chikita, Hironori

AU - Sadoh, Taizoh

AU - Miyao, M.

PY - 2014/1/16

Y1 - 2014/1/16

N2 - Rapid-melting growth of SiGe stripes on insulator without crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the self-organized formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.

AB - Rapid-melting growth of SiGe stripes on insulator without crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the self-organized formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.

UR - http://www.scopus.com/inward/record.url?scp=84891909414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891909414&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMM.481.27

DO - 10.4028/www.scientific.net/AMM.481.27

M3 - Conference contribution

SN - 9783037859681

T3 - Applied Mechanics and Materials

SP - 27

EP - 29

BT - Quantum, Nano, Micro Technologies and Applied Researches

ER -