TY - GEN
T1 - Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth
AU - Matsumura, R.
AU - Tojo, Y.
AU - Yokoyama, H.
AU - Kurosawa, M.
AU - Sadoh, T.
AU - Miyao, M.
PY - 2013
Y1 - 2013
N2 - Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.
AB - Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.
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U2 - 10.1149/05009.0747ecst
DO - 10.1149/05009.0747ecst
M3 - Conference contribution
AN - SCOPUS:84885757435
SN - 9781607683575
T3 - ECS Transactions
SP - 747
EP - 751
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -