TY - JOUR
T1 - Formation of high-purity organic thin films by gas flow deposition and the effect of impurities on device characteristics
AU - Tsugita, Kohei
AU - Edura, Tomohiko
AU - Yahiro, Masayuki
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported in part by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) and the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by MEXT. We are grateful to Hiroshi Miyazaki (Nippon Steel & Sumikin Chemical Co., Ltd.) for valuable discussion about the degradation of organic materials. We also acknowledge Hiroyuki Ikuta, Dr. Toyohiro Kamada, Shimon Otsuki and Takafumi Nogami (Tokyo Electron Technology Development Institute, Inc.) for assistance with experiments.
PY - 2013
Y1 - 2013
N2 - A gas flow deposition (GFD) system was developed to manufacture large-scale organic light-emitting diodes (OLEDs). A N,N′-di(1-naphthyl)-N,N′- diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost the same as those of films made by conventional vacuum thermal evaporation.
AB - A gas flow deposition (GFD) system was developed to manufacture large-scale organic light-emitting diodes (OLEDs). A N,N′-di(1-naphthyl)-N,N′- diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost the same as those of films made by conventional vacuum thermal evaporation.
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U2 - 10.1016/j.displa.2013.08.008
DO - 10.1016/j.displa.2013.08.008
M3 - Article
AN - SCOPUS:84888860161
SN - 0141-9382
VL - 34
SP - 418
EP - 422
JO - Displays
JF - Displays
IS - 5
ER -