Abstract
The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.
| Original language | English |
|---|---|
| Pages | 887-892 |
| Number of pages | 6 |
| Publication status | Published - Dec 1 2004 |
| Event | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
| Other | SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. / Sadoh, T.; Matsuura, R.; Tsunoda, I.; Ninomiya, M.; Nakamae, M.; Enokida, T.; Hagino, H.; Miyao, M.
2004. 887-892 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.Research output: Contribution to conference › Paper
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TY - CONF
T1 - Formation of high quality SGOI structure by modified oxidation-induced GE condensation process
AU - Sadoh, T.
AU - Matsuura, R.
AU - Tsunoda, I.
AU - Ninomiya, M.
AU - Nakamae, M.
AU - Enokida, T.
AU - Hagino, H.
AU - Miyao, M.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.
AB - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.
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UR - http://www.scopus.com/inward/citedby.url?scp=17044391486&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:17044391486
SP - 887
EP - 892
ER -