Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

T. Sadoh; R. Matsuura; I. Tsunoda; M. Ninomiya; M. Nakamae; T. Enokida; H. Hagino; M. Miyao

Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

T. Sadoh, R. Matsuura, I. Tsunoda, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

Electronic Devices

Research output: Contribution to conference › Paper › peer-review

Abstract

The effects of the hydrogen ion (H⁺) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>10¹⁵ cm^-2) H⁺ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si _1-xGe_x/buried oxide (BOX) interfaces. This newly developed combination method of H⁺ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

Original language	English
Pages	887-892
Number of pages	6
Publication status	Published - Dec 1 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

All Science Journal Classification (ASJC) codes

Engineering(all)

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Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. / Sadoh, T.; Matsuura, R.; Tsunoda, I.; Ninomiya, M.; Nakamae, M.; Enokida, T.; Hagino, H.; Miyao, M.

2004. 887-892 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Formation of high quality SGOI structure by modified oxidation-induced GE condensation process",

abstract = "The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.",

author = "T. Sadoh and R. Matsuura and I. Tsunoda and M. Ninomiya and M. Nakamae and T. Enokida and H. Hagino and M. Miyao",

year = "2004",

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T1 - Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

AU - Sadoh, T.

AU - Matsuura, R.

AU - Tsunoda, I.

AU - Ninomiya, M.

AU - Nakamae, M.

AU - Enokida, T.

AU - Hagino, H.

AU - Miyao, M.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

AB - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

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