Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

T. Sadoh, R. Matsuura, I. Tsunoda, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

Research output: Contribution to conferencePaper

Abstract

The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

Original languageEnglish
Pages887-892
Number of pages6
Publication statusPublished - Dec 1 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

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Condensation
Ion implantation
Oxidation
Stress relaxation
Annealing
Hydrogen
Radiation
Oxides
Ions

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sadoh, T., Matsuura, R., Tsunoda, I., Ninomiya, M., Nakamae, M., Enokida, T., ... Miyao, M. (2004). Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. 887-892. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. / Sadoh, T.; Matsuura, R.; Tsunoda, I.; Ninomiya, M.; Nakamae, M.; Enokida, T.; Hagino, H.; Miyao, M.

2004. 887-892 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conferencePaper

Sadoh, T, Matsuura, R, Tsunoda, I, Ninomiya, M, Nakamae, M, Enokida, T, Hagino, H & Miyao, M 2004, 'Formation of high quality SGOI structure by modified oxidation-induced GE condensation process', Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States, 10/3/04 - 10/8/04 pp. 887-892.
Sadoh T, Matsuura R, Tsunoda I, Ninomiya M, Nakamae M, Enokida T et al. Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. 2004. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.
Sadoh, T. ; Matsuura, R. ; Tsunoda, I. ; Ninomiya, M. ; Nakamae, M. ; Enokida, T. ; Hagino, H. ; Miyao, M. / Formation of high quality SGOI structure by modified oxidation-induced GE condensation process. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.6 p.
@conference{1efb60fc709e484391ff03e5bd0f573e,
title = "Formation of high quality SGOI structure by modified oxidation-induced GE condensation process",
abstract = "The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.",
author = "T. Sadoh and R. Matsuura and I. Tsunoda and M. Ninomiya and M. Nakamae and T. Enokida and H. Hagino and M. Miyao",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "887--892",
note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Formation of high quality SGOI structure by modified oxidation-induced GE condensation process

AU - Sadoh, T.

AU - Matsuura, R.

AU - Tsunoda, I.

AU - Ninomiya, M.

AU - Nakamae, M.

AU - Enokida, T.

AU - Hagino, H.

AU - Miyao, M.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

AB - The effects of the hydrogen ion (H+) implantation on the stress relaxation of SiGe layers on insulator (SGOI) during the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI layers was significantly improved by using high dose (>1015 cm-2) H+ implantation. However, the radiation-enhanced oxidation was also generated by the implantation. In order to suppress the enhanced oxidation and realize the precise control of the Ge fraction, the two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) was proposed. The results showed that the enhanced oxidation was completely suppressed by the two-step annealing with keeping the enhanced relaxation. The improvement was tentatively assigned to the enhanced gliding at the c-Si 1-xGex/buried oxide (BOX) interfaces. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge, condensation will be a powerful tool to fabricate highly relaxed SGOI.

UR - http://www.scopus.com/inward/record.url?scp=17044391486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044391486&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044391486

SP - 887

EP - 892

ER -