Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

R. Matsumura, Y. Kai, H. Chikita, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalConference articlepeer-review

Abstract

To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalECS Transactions
Volume61
Issue number3
DOIs
Publication statusPublished - Jan 1 2014
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)'. Together they form a unique fingerprint.

Cite this