To realize next generation thin-film-transistors (TFTs), seedless rapidmelting growth of Ge on insulator is investigated. By rapid-thermal annealing (RTA) of amorphous GeSn (a-GeSn) layers on insulating substrates at a temperature between the solidification point and the melting point, GeSn layers melt incompletely, which generates a limited number of solid nuclei as residue. Once cooling starts, liquid-phase epitaxial growth occurs from these nuclei, which results in growth of large-grain crystals. Since segregation coefficient of Sn in Ge is very small (∼0.02), almost all Sn atoms segregate at edges of the grown regions. As a result, almost Snfree (≤1%) large Ge crystal grains are achieved on insulating substrates by a self-organizing process.
|Number of pages||4|
|Publication status||Published - Jan 1 2014|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States|
Duration: May 11 2014 → May 15 2014
All Science Journal Classification (ASJC) codes