Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process

R. Kato, M. Kurosawa, R. Matsumura, Y. Tojo, T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Rapid-melting growth of SiGe stripes on insulator without any crystal-seed has been investigated. After rapid-thermal annealing (RTA) of amorphous SiGe stripes (~5 μm) at a temperature between melting-point and solidification-point, SiGe crystals with large lateral sizes (~20 μm) are formed. The Si concentrations in the grains show peaks at the center of the grains and gradually decrease toward the grain boundaries. These phenomena are explained based on the formation of Si-rich micro-crystals and subsequent Si-segregating lateral-growth during RTA.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages431-436
Number of pages6
Edition9
DOIs
Publication statusPublished - Dec 1 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kato, R., Kurosawa, M., Matsumura, R., Tojo, Y., Sadoh, T., & Miyao, M. (2012). Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 431-436). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0431ecst