@inproceedings{91119d4663b540e8a192e411937407ad,
title = "Formation of low resistance contacts to p-type 4H-SiC using al-film source laser doping",
abstract = "Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.",
author = "Kento Okamoto and Toshifumi Kikuchi and Akihiro Ikeda and Hiroshi Ikenoue and Tanemasa Asano",
year = "2019",
month = "1",
day = "1",
language = "English",
series = "PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology",
publisher = "SciTePress",
pages = "294--298",
editor = "Paulo Ribeiro and Maria Raposo and David Andrews",
booktitle = "PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology",
}