TY - GEN
T1 - Formation of low resistance contacts to p-type 4H-SiC using al-film source laser doping
AU - Okamoto, Kento
AU - Kikuchi, Toshifumi
AU - Ikeda, Akihiro
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
N1 - Funding Information:
This work is supported in part by Grants-in-Aid for Scientific Research, KAKENHI, (No. JP17K06387 and No. JP16H02342) from Japan Society for the Promotion of Science. A part of this work was carried out by using the facility of Department of Gigaphoton Next GLP.
PY - 2019
Y1 - 2019
N2 - Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.
AB - Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.
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U2 - 10.5220/0007583002940298
DO - 10.5220/0007583002940298
M3 - Conference contribution
AN - SCOPUS:85064673915
T3 - PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology
SP - 294
EP - 298
BT - PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology
A2 - Raposo, Maria
A2 - Ribeiro, Paulo
A2 - Andrews, David
PB - SciTePress
T2 - 7th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2019
Y2 - 25 February 2019 through 27 February 2019
ER -