Formation of low resistance contacts to p-type 4H-SiC using al-film source laser doping

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.

Original languageEnglish
Title of host publicationPHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology
EditorsPaulo Ribeiro, Maria Raposo, David Andrews
PublisherSciTePress
Pages294-298
Number of pages5
ISBN (Electronic)9789897583643
Publication statusPublished - Jan 1 2019
Event7th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2019 - Prague, Czech Republic
Duration: Feb 25 2019Feb 27 2019

Publication series

NamePHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology

Conference

Conference7th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2019
CountryCzech Republic
CityPrague
Period2/25/192/27/19

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Okamoto, K., Kikuchi, T., Ikeda, A., Ikenoue, H., & Asano, T. (2019). Formation of low resistance contacts to p-type 4H-SiC using al-film source laser doping. In P. Ribeiro, M. Raposo, & D. Andrews (Eds.), PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology (pp. 294-298). (PHOTOPTICS 2019 - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology). SciTePress.