TY - JOUR
T1 - Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion
AU - Ikoma, Yoshifumi
AU - Yamasaki, Terumasa
AU - Shimizu, Takahiro
AU - Takaira, Marina
AU - Kohno, Masamichi
AU - Guo, Qixin
AU - McCartney, Martha R.
AU - Smith, David J.
AU - Arai, Yasutomo
AU - Horita, Zenji
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) (Grant No. JP18H01384) from the Japan Society for the Promotion of Science. The authors thank Prof. Junichiro Shiomi of The University of Tokyo for valuable discussion. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University, and in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University.
Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) (Grant No. JP18H01384 ) from the Japan Society for the Promotion of Science . The authors thank Prof. Junichiro Shiomi of The University of Tokyo for valuable discussion. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University, and in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University.
Publisher Copyright:
© 2020 Elsevier Inc.
PY - 2020/11
Y1 - 2020/11
N2 - Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (~9 × 10−3 Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.
AB - Si0.5Ge0.5 crystals were subjected to severe plastic deformation using high-pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was formed by HPT processing with anvil rotations. High-resolution transmission electron microscopy analysis revealed that nanograins having diamond-cubic (dc) and bc8 phases were present in the HPT-processed sample. The bc8 phase was reverse transformed back to the dc phase after annealing. The resistivity of the crystalline Si0.5Ge0.5 (~9 × 10−3 Ω·cm) increased by roughly a factor of 6 after compression, and remained on the same order of magnitude but decreased slightly after 10 anvil rotations despite the grain refinement. These results indicate that the electrical behavior of bc8-Si0.5Ge0.5 is similar to that of bc8-Si.
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U2 - 10.1016/j.matchar.2020.110590
DO - 10.1016/j.matchar.2020.110590
M3 - Article
AN - SCOPUS:85090033243
VL - 169
JO - Materials Characterization
JF - Materials Characterization
SN - 1044-5803
M1 - 110590
ER -