Formation of MgAu alloy cathode by photolithography and its application to organic light-emitting diodes and organic field effect transistors

Takahito Oyamada, Hiroyuki Sasabe, Chihaya Adachi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

To make an efficient electron injection electrode by photolithography, we studied MgAu alloy electrodes, which have a low work function and high resistance to humidity and oxygen. The measured work function of MgAu alloy thin film was 3.7 eV, which is comparable with that of a pure Mg layer and ∼0.8 eV lower than that of a pure Au layer. This low work function was maintained even after photolithography, suggesting excellent stability for solvent treatment. Investigating organic field-effect transistor (OFET) characteristics when MgAu alloy comb type source and drain electrodes were used, we successfully obtained n-type FET operation. Furthermore, organic light-emitting diodes (OLEDs) demonstrated the efficient electron injection characteristics of the MgAu alloy cathode, which were similar to those of the conventional MgAg cathode.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalElectrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
Volume152
Issue number1
DOIs
Publication statusPublished - Jul 15 2005
Externally publishedYes

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Organic field effect transistors
Organic light emitting diodes (OLED)
Photolithography
Cathodes
Electron injection
Electrodes
Field effect transistors
Atmospheric humidity
Thin films
Oxygen

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

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abstract = "To make an efficient electron injection electrode by photolithography, we studied MgAu alloy electrodes, which have a low work function and high resistance to humidity and oxygen. The measured work function of MgAu alloy thin film was 3.7 eV, which is comparable with that of a pure Mg layer and ∼0.8 eV lower than that of a pure Au layer. This low work function was maintained even after photolithography, suggesting excellent stability for solvent treatment. Investigating organic field-effect transistor (OFET) characteristics when MgAu alloy comb type source and drain electrodes were used, we successfully obtained n-type FET operation. Furthermore, organic light-emitting diodes (OLEDs) demonstrated the efficient electron injection characteristics of the MgAu alloy cathode, which were similar to those of the conventional MgAg cathode.",
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AB - To make an efficient electron injection electrode by photolithography, we studied MgAu alloy electrodes, which have a low work function and high resistance to humidity and oxygen. The measured work function of MgAu alloy thin film was 3.7 eV, which is comparable with that of a pure Mg layer and ∼0.8 eV lower than that of a pure Au layer. This low work function was maintained even after photolithography, suggesting excellent stability for solvent treatment. Investigating organic field-effect transistor (OFET) characteristics when MgAu alloy comb type source and drain electrodes were used, we successfully obtained n-type FET operation. Furthermore, organic light-emitting diodes (OLEDs) demonstrated the efficient electron injection characteristics of the MgAu alloy cathode, which were similar to those of the conventional MgAg cathode.

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