Formation of microstructures and continuous heating and time-temperature transformation diagrams of YBa2Cu3O7-x film fabricated by metal organic deposition with trifluoroacetates

Nobuyuki Mori, Ryo Teranishi, Keisuke Tada, Jiro Yoshida, Kazuhiro Yamada, Masashi Mukaida

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The metal organic deposition (MOD) using a precursor solution of trifluoroacetates (TFA) is known to be a promising low cost nonvacuum process for fabricating a high-Jc coated conductor of YBa2Cu 3O7-x (YBCO or Y123) film. However, the details of the growth process of Y123 crystals are still unknown. To clarify the growth mechanism of Y123 crystals in the film, the growth processes of Y123 crystals were studied experimentally through transmission electron microscopy (TEM) observations of the specimens quenched during the growth of Y123 crystals on LaAlO3 (LAO) substrates, and the continuous heating and time-temperature transformation (CHT/TTT) diagrams and the growth model of c/a-oriented Y123 crystals were obtained. Furthermore, the growth processes of faceted Y123 crystals with various crystal orientations were simulated by the two-dimensional numerical method using c- and a-axis growth rate functions. The formation processes of microstructures of Y123 crystals were visualized using the growth model and the simulation.

    Original languageEnglish
    Pages (from-to)7131-7135
    Number of pages5
    JournalJapanese journal of applied physics
    Volume47
    Issue number9 PART 1
    DOIs
    Publication statusPublished - Sep 12 2008

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Formation of microstructures and continuous heating and time-temperature transformation diagrams of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> film fabricated by metal organic deposition with trifluoroacetates'. Together they form a unique fingerprint.

    Cite this