Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-22
Number of pages2
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period6/1/176/2/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 21-22). [7966503] (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966503