Abstract
Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.
| Original language | English |
|---|---|
| Title of host publication | 17th International Workshop on Junction Technology, IWJT 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 21-22 |
| Number of pages | 2 |
| ISBN (Electronic) | 9784863486263 |
| DOIs | |
| Publication status | Published - Jun 30 2017 |
| Event | 17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan Duration: Jun 1 2017 → Jun 2 2017 |
Publication series
| Name | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|
Other
| Other | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 6/1/17 → 6/2/17 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 21-22). [7966503] (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966503