Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-22
Number of pages2
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period6/1/176/2/17

Fingerprint

Crystallization
Integrated circuits
Crystalline materials
Temperature
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 21-22). [7966503] (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966503

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. / Gao, Hongmiao; Aoki, Rikuta; Sasaki, Masaya; Miyao, Masanobu; Sadoh, Taizoh.

17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 21-22 7966503 (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gao, H, Aoki, R, Sasaki, M, Miyao, M & Sadoh, T 2017, Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. in 17th International Workshop on Junction Technology, IWJT 2017., 7966503, 17th International Workshop on Junction Technology, IWJT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 21-22, 17th International Workshop on Junction Technology, IWJT 2017, Kyoto, Japan, 6/1/17. https://doi.org/10.23919/IWJT.2017.7966503
Gao H, Aoki R, Sasaki M, Miyao M, Sadoh T. Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 21-22. 7966503. (17th International Workshop on Junction Technology, IWJT 2017). https://doi.org/10.23919/IWJT.2017.7966503
Gao, Hongmiao ; Aoki, Rikuta ; Sasaki, Masaya ; Miyao, Masanobu ; Sadoh, Taizoh. / Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 21-22 (17th International Workshop on Junction Technology, IWJT 2017).
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