Abstract
Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.
| Original language | English |
|---|---|
| Title of host publication | 17th International Workshop on Junction Technology, IWJT 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 21-22 |
| Number of pages | 2 |
| ISBN (Electronic) | 9784863486263 |
| DOIs | |
| Publication status | Published - Jun 30 2017 |
| Event | 17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan Duration: Jun 1 2017 → Jun 2 2017 |
Publication series
| Name | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|
Other
| Other | 17th International Workshop on Junction Technology, IWJT 2017 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 6/1/17 → 6/2/17 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. / Gao, Hongmiao; Aoki, Rikuta; Sasaki, Masaya; Miyao, Masanobu; Sadoh, Taizoh.
17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 21-22 7966503 (17th International Workshop on Junction Technology, IWJT 2017).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization
AU - Gao, Hongmiao
AU - Aoki, Rikuta
AU - Sasaki, Masaya
AU - Miyao, Masanobu
AU - Sadoh, Taizoh
PY - 2017/6/30
Y1 - 2017/6/30
N2 - Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.
AB - Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.
UR - http://www.scopus.com/inward/record.url?scp=85026758016&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026758016&partnerID=8YFLogxK
U2 - 10.23919/IWJT.2017.7966503
DO - 10.23919/IWJT.2017.7966503
M3 - Conference contribution
AN - SCOPUS:85026758016
T3 - 17th International Workshop on Junction Technology, IWJT 2017
SP - 21
EP - 22
BT - 17th International Workshop on Junction Technology, IWJT 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -