@inproceedings{00f8013d3f504837ac80c950258b40c5,
title = "Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization",
abstract = "Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.",
author = "Hongmiao Gao and Rikuta Aoki and Masaya Sasaki and Masanobu Miyao and Taizoh Sadoh",
year = "2017",
month = jun,
day = "30",
doi = "10.23919/IWJT.2017.7966503",
language = "English",
series = "17th International Workshop on Junction Technology, IWJT 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "21--22",
booktitle = "17th International Workshop on Junction Technology, IWJT 2017",
address = "United States",
note = "17th International Workshop on Junction Technology, IWJT 2017 ; Conference date: 01-06-2017 Through 02-06-2017",
}