Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature (≤500°C) formation of n-type crystalline Ge films on insulator is required to achieve the next-generation large-scale integrated circuits (LSI), where optical functions are merged. This is because n-type Ge shows high-efficiency optical functions owing to high electron population in the Γ band.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-22
Number of pages2
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period6/1/176/2/17

Fingerprint

Crystallization
Integrated circuits
Crystalline materials
Temperature
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 21-22). [7966503] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966503

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. / Gao, Hongmiao; Aoki, Rikuta; Sasaki, Masaya; Miyao, Masanobu; Sadoh, Taizoh.

17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 21-22 7966503.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gao, H, Aoki, R, Sasaki, M, Miyao, M & Sadoh, T 2017, Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. in 17th International Workshop on Junction Technology, IWJT 2017., 7966503, Institute of Electrical and Electronics Engineers Inc., pp. 21-22, 17th International Workshop on Junction Technology, IWJT 2017, Kyoto, Japan, 6/1/17. https://doi.org/10.23919/IWJT.2017.7966503
Gao H, Aoki R, Sasaki M, Miyao M, Sadoh T. Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. In 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 21-22. 7966503 https://doi.org/10.23919/IWJT.2017.7966503
Gao, Hongmiao ; Aoki, Rikuta ; Sasaki, Masaya ; Miyao, Masanobu ; Sadoh, Taizoh. / Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization. 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 21-22
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