Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD

Toshiaki Abe, Shouhei Anan, Fumiya Watanabe, Ryoji Takahashi, Yoshifumi Ikoma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition hasbeen investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at1150 °C resulted in circular patterns with a diameter of ~40 μm on the sample surfaces. In thecenter of the circular patterns, agglomerations of Au were observed. It was found that the oxidelayer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circularpatterns. These results indicate that the nanocrystalline Si was grown by the VLS process in whichSi atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

    Original languageEnglish
    Title of host publicationAdvanced Materials Science and Technology
    PublisherTrans Tech Publications Ltd
    Pages244-247
    Number of pages4
    ISBN (Print)9783037856604
    DOIs
    Publication statusPublished - 2013
    Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
    Duration: Aug 1 2012Aug 4 2012

    Publication series

    NameMaterials Science Forum
    Volume750
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752

    Other

    Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
    CountryJapan
    CityFukuoka City
    Period8/1/128/4/12

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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