Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD

Toshiaki Abe, Shouhei Anan, Fumiya Watanabe, Ryoji Takahashi, Yoshifumi Ikoma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition hasbeen investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at1150 °C resulted in circular patterns with a diameter of ~40 μm on the sample surfaces. In thecenter of the circular patterns, agglomerations of Au were observed. It was found that the oxidelayer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circularpatterns. These results indicate that the nanocrystalline Si was grown by the VLS process in whichSi atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

Original languageEnglish
Title of host publicationAdvanced Materials Science and Technology
Pages244-247
Number of pages4
DOIs
Publication statusPublished - Apr 10 2013
Event8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, Japan
Duration: Aug 1 2012Aug 4 2012

Publication series

NameMaterials Science Forum
Volume750
ISSN (Print)0255-5476

Other

Other8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
CountryJapan
CityFukuoka City
Period8/1/128/4/12

Fingerprint

Chemical vapor deposition
vapor deposition
pulses
agglomeration
Oxides
Agglomeration
Irradiation
Thin films
Atoms
Molecules
irradiation
oxides
Substrates
thin films
atoms
molecules

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Abe, T., Anan, S., Watanabe, F., Takahashi, R., & Ikoma, Y. (2013). Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD. In Advanced Materials Science and Technology (pp. 244-247). (Materials Science Forum; Vol. 750). https://doi.org/10.4028/www.scientific.net/MSF.750.244

Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD. / Abe, Toshiaki; Anan, Shouhei; Watanabe, Fumiya; Takahashi, Ryoji; Ikoma, Yoshifumi.

Advanced Materials Science and Technology. 2013. p. 244-247 (Materials Science Forum; Vol. 750).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abe, T, Anan, S, Watanabe, F, Takahashi, R & Ikoma, Y 2013, Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD. in Advanced Materials Science and Technology. Materials Science Forum, vol. 750, pp. 244-247, 8th International Forum on Advanced Materials Science and Technology, IFAMST 2012, Fukuoka City, Japan, 8/1/12. https://doi.org/10.4028/www.scientific.net/MSF.750.244
Abe T, Anan S, Watanabe F, Takahashi R, Ikoma Y. Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD. In Advanced Materials Science and Technology. 2013. p. 244-247. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.750.244
Abe, Toshiaki ; Anan, Shouhei ; Watanabe, Fumiya ; Takahashi, Ryoji ; Ikoma, Yoshifumi. / Formation of nanocrystalline Si by Au-catalyzed CH3SiH3 pulse jet CVD. Advanced Materials Science and Technology. 2013. pp. 244-247 (Materials Science Forum).
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