TY - GEN
T1 - Formation of nanostructured germanium-on-insulator for integration of multi-functional materials on a panel
AU - Anisuzzaman, M.
AU - Muta, S.
AU - Hashim, A. M.
AU - Miyao, M.
AU - Sadoh, T.
PY - 2012/10/31
Y1 - 2012/10/31
N2 - Single-crystal germanium-on-insulator (GOI) structures are essential to integrate high-speed transistors, high-efficiency solar cells, and non-volatile spintronic memories on a panel, because GOI structures can be used as templates for epitaxial growth of multi-functional materials, as well as channel layers with high-carrier mobility. We investigate formation of high-density nanostructured single crystalline GOI templates by SiGe-mixing-triggered rapid melting growth. The GOI structures consisting of dense strip-arrays and mesh-networks are examined. For strip-array patterns, rotation in crystal orientation along the growth direction is observed. However, such crystal rotation has been completely suppressed by employing mesh-network patterns. This enables high-density single-crystal GOI templates with narrow spacing (<500nm). Moreover, epitaxial growth of Ge on the GOI templates is examined by a molecular beam technique.
AB - Single-crystal germanium-on-insulator (GOI) structures are essential to integrate high-speed transistors, high-efficiency solar cells, and non-volatile spintronic memories on a panel, because GOI structures can be used as templates for epitaxial growth of multi-functional materials, as well as channel layers with high-carrier mobility. We investigate formation of high-density nanostructured single crystalline GOI templates by SiGe-mixing-triggered rapid melting growth. The GOI structures consisting of dense strip-arrays and mesh-networks are examined. For strip-array patterns, rotation in crystal orientation along the growth direction is observed. However, such crystal rotation has been completely suppressed by employing mesh-network patterns. This enables high-density single-crystal GOI templates with narrow spacing (<500nm). Moreover, epitaxial growth of Ge on the GOI templates is examined by a molecular beam technique.
UR - http://www.scopus.com/inward/record.url?scp=84867904682&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:84867904682
SN - 9781467303996
T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
SP - 235
EP - 238
BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Y2 - 4 July 2012 through 6 July 2012
ER -