Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine(m-MTDATA), 4,4′,4″- tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4, 4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

Original languageEnglish
Pages (from-to)161-166
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1154
Publication statusPublished - Dec 1 2009
Externally publishedYes
Event2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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