Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films

Toshinori Matsushima; Guang He Jin; Yoshihiro Kanai; Tomoyuki Yokota; Seiki Kitada; Toshiyuki Kishi; Hideyuki Murata

doi:10.1557/proc-1154-b10-92

Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO₃) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine(m-MTDATA), 4,4′,4″- tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4, 4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ₀) are about one order of magnitude lower than zero field TOF mobilities.

Original language	English
Pages (from-to)	161-166
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	1154
DOIs	https://doi.org/10.1557/proc-1154-b10-92
Publication status	Published - Jan 1 2009
Externally published	Yes
Event	2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films. / Matsushima, Toshinori; Jin, Guang He; Kanai, Yoshihiro; Yokota, Tomoyuki; Kitada, Seiki; Kishi, Toshiyuki; Murata, Hideyuki.

In: Materials Research Society Symposium Proceedings, Vol. 1154, 01.01.2009, p. 161-166.

Research output: Contribution to journal › Conference article › peer-review

@article{2a8ddf977ba7400f9f51e3f52a46e9db,

title = "Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films",

abstract = "We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine(m-MTDATA), 4,4′,4″- tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4, 4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.",

author = "Toshinori Matsushima and Jin, {Guang He} and Yoshihiro Kanai and Tomoyuki Yokota and Seiki Kitada and Toshiyuki Kishi and Hideyuki Murata",

year = "2009",

month = jan,

day = "1",

doi = "10.1557/proc-1154-b10-92",

language = "English",

volume = "1154",

pages = "161--166",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics ; Conference date: 13-04-2009 Through 17-04-2009",

}

TY - JOUR

T1 - Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films

AU - Matsushima, Toshinori

AU - Jin, Guang He

AU - Kanai, Yoshihiro

AU - Yokota, Tomoyuki

AU - Kitada, Seiki

AU - Kishi, Toshiyuki

AU - Murata, Hideyuki

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine(m-MTDATA), 4,4′,4″- tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4, 4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

AB - We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3- methylphenyl-N-phenyl-amino)triphenylamine(m-MTDATA), 4,4′,4″- tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4, 4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

UR - http://www.scopus.com/inward/record.url?scp=72849132991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72849132991&partnerID=8YFLogxK

U2 - 10.1557/proc-1154-b10-92

DO - 10.1557/proc-1154-b10-92

M3 - Conference article

AN - SCOPUS:72849132991

VL - 1154

SP - 161

EP - 166

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - 2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics

Y2 - 13 April 2009 through 17 April 2009

ER -

Formation of Ohmic carrier injection at anode/organic interfaces and carrier transport mechanisms of organic thin films

Abstract

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