Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Tsuyoshi Fukada, Tanemasa Asano, Seijiro Frukawa, Hiroshi Ishiwara

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As+ or P+ in Ge and Si+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalJapanese Journal of Applied Physics
Volume26
Issue number1 R
DOIs
Publication statusPublished - 1987
Externally publishedYes

Fingerprint

Ohmic contacts
Epitaxial growth
epitaxy
solid phases
electric contacts
Annealing
annealing
Ions
ions
Ion implantation
Heterojunctions
ion implantation
implantation
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films. / Fukada, Tsuyoshi; Asano, Tanemasa; Frukawa, Seijiro; Ishiwara, Hiroshi.

In: Japanese Journal of Applied Physics, Vol. 26, No. 1 R, 1987, p. 117-121.

Research output: Contribution to journalArticle

Fukada, Tsuyoshi ; Asano, Tanemasa ; Frukawa, Seijiro ; Ishiwara, Hiroshi. / Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films. In: Japanese Journal of Applied Physics. 1987 ; Vol. 26, No. 1 R. pp. 117-121.
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