Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Tsuyoshi Fukada, Tanemasa Asano, Seijiro Frukawa, Hiroshi Ishiwara

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ge films evaporated on GaAs(100) substrates have been amorphized by ion implantation and recrystallized epitaxially in the solid phase. Ohmic characteristics have been obtained in Ge/n-GaAs heterostructures by implantation of As+ or P+ in Ge and Si+ at the interface. A two-step annealing method was found to be effective to obtain ohmic characteristics. In two-step annealing, the first annealing step at low temperature is for solid phase recrystallization of Ge films; the second step involves rapid high-temperature annealing in order to activate the implanted species. It has also been found that interdiffusion should be minimized in order to obtain good ohmic characteristics.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalJapanese Journal of Applied Physics
Volume26
Issue number1 R
DOIs
Publication statusPublished - Jan 1987

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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