Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers

Toshinori Matsushima, Yoshiki Kinoshita, Hideyuki Murata

Research output: Contribution to journalArticlepeer-review

289 Citations (Scopus)

Abstract

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (Mo O3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm -thick Mo O3 layer forms Ohmic hole injection at the ITOMo O3 α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to Mo O3.

Original languageEnglish
Article number253504
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
Publication statusPublished - 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers'. Together they form a unique fingerprint.

Cite this