Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers

Toshinori Matsushima, Yoshiki Kinoshita, Hideyuki Murata

Research output: Contribution to journalArticle

275 Citations (Scopus)

Abstract

Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (Mo O3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm -thick Mo O3 layer forms Ohmic hole injection at the ITOMo O3 α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to an electron transfer from ITO and α-NPD to Mo O3.

Original languageEnglish
Article number253504
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
Publication statusPublished - Dec 1 2007

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indium oxides
tin oxides
molybdenum
injection
diamines
infrared absorption
space charge
electron transfer
photoelectrons
anodes
buffers
current density
electric potential
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers. / Matsushima, Toshinori; Kinoshita, Yoshiki; Murata, Hideyuki.

In: Applied Physics Letters, Vol. 91, No. 25, 253504, 01.12.2007.

Research output: Contribution to journalArticle

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