TY - JOUR
T1 - Formation of one-dimensional ZnO nanowires from screw-dislocation-driven two-dimensional hexagonal stacking on diamond substrate using nanoparticle-assisted pulsed laser deposition
AU - Senthil Kumar, E.
AU - Chandran, Maneesh
AU - Bellarmine, F.
AU - Mannam, Ramanjaneyulu
AU - Nakamura, Daisuke
AU - Higashihata, Mitsuhiro
AU - Okada, Tatsuo
AU - Ramachandra Rao, M. S.
PY - 2014/1/22
Y1 - 2014/1/22
N2 - We report on the growth of ZnO nanowires on a p-type diamond substrate using nanoparticle-assisted pulsed laser deposition technique. Microstructural analysis on different growth stages reveals that the self-assembled 1D ZnO nanowires emerge on well-formed 2D hexagonal base with spiral-like structures. We explain the formation of screw-dislocation-driven spiral-like-hexagons invoking crystal growth velocities at different regions of the hexagons. High-resolution transmission electron microscopy and selective area electron diffraction studies show that the nanowires are single crystalline in nature and grow along 0 0 0 1 direction of the wurtzite hexagonal structure. Room temperature photoluminescence spectrum of the ZnO nanowire shows a strong near band edge emission at 3.2 eV with a linewidth of 136 meV.
AB - We report on the growth of ZnO nanowires on a p-type diamond substrate using nanoparticle-assisted pulsed laser deposition technique. Microstructural analysis on different growth stages reveals that the self-assembled 1D ZnO nanowires emerge on well-formed 2D hexagonal base with spiral-like structures. We explain the formation of screw-dislocation-driven spiral-like-hexagons invoking crystal growth velocities at different regions of the hexagons. High-resolution transmission electron microscopy and selective area electron diffraction studies show that the nanowires are single crystalline in nature and grow along 0 0 0 1 direction of the wurtzite hexagonal structure. Room temperature photoluminescence spectrum of the ZnO nanowire shows a strong near band edge emission at 3.2 eV with a linewidth of 136 meV.
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U2 - 10.1088/0022-3727/47/3/034016
DO - 10.1088/0022-3727/47/3/034016
M3 - Article
AN - SCOPUS:84891051713
SN - 0022-3727
VL - 47
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 3
M1 - 034016
ER -