Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping

Shinya Ohmagari, Tsuyoshi Yoshitake, Akira Nagano, Ryota Ohtani, Hiroyuki Setoyama, Eiichi Kobayashi, Takeshi Hara, Kunihito Nagayama

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)

    Abstract

    p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C-H peak weakened and the σ*C-B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C-H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.

    Original languageEnglish
    JournalJapanese journal of applied physics
    Volume49
    Issue number3 PART 1
    DOIs
    Publication statusPublished - 2010

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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