Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets

Y. Katamune; S. Ohmagari; H. Setoyama; K. Sumitani; Y. Hirai; T. Yoshitake

doi:10.1149/05020.0023ecst

Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets

Y. Katamune, S. Ohmagari, H. Setoyama, K. Sumitani, Y. Hirai, T. Yoshitake

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Boron-doped ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared by coaxial arc plasma deposition (CAPD) with boron-blended graphite target. Their growth was achieved at room temperature and a base pressure of less than 10?3 Pa (no inflow gas) owing to CAPD, whereas the growth of UNCD films by chemical vapor deposition generally requires high substrate temperatures of more than 700 °C and a hydrogen ambient gas. The formation of p-type conduction was confirmed thermally, namely Seebeck effect, and heterojunction diodes formed with n-type Si exhibited a typical rectifying action. It was demonstrated that CAPD is advantageous to the practical film formation including doping.

Original language	English
Title of host publication	Carbon Nanotubes and Graphene
Subtitle of host publication	From Fundamental Properties and Processes to Applications and Devices
Publisher	Electrochemical Society Inc.
Pages	23-28
Number of pages	6
Edition	20
ISBN (Print)	9781607684015
DOIs	https://doi.org/10.1149/05020.0023ecst
Publication status	Published - 2013
Event	Symposium on Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012

Publication series

Name	ECS Transactions
Number	20
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices - 222nd ECS Meeting/PRiME 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/7/12 → 10/12/12

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/05020.0023ecst

Cite this

Katamune, Y., Ohmagari, S., Setoyama, H., Sumitani, K., Hirai, Y., & Yoshitake, T. (2013). Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets. In Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices (20 ed., pp. 23-28). (ECS Transactions; Vol. 50, No. 20). Electrochemical Society Inc.. https://doi.org/10.1149/05020.0023ecst

Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets. / Katamune, Y.; Ohmagari, S.; Setoyama, H. et al.

Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices. 20. ed. Electrochemical Society Inc., 2013. p. 23-28 (ECS Transactions; Vol. 50, No. 20).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Katamune, Y, Ohmagari, S, Setoyama, H, Sumitani, K, Hirai, Y & Yoshitake, T 2013, Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets. in Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices. 20 edn, ECS Transactions, no. 20, vol. 50, Electrochemical Society Inc., pp. 23-28, Symposium on Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05020.0023ecst

Katamune Y, Ohmagari S, Setoyama H, Sumitani K, Hirai Y, Yoshitake T. Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets. In Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices. 20 ed. Electrochemical Society Inc. 2013. p. 23-28. (ECS Transactions; 20). doi: 10.1149/05020.0023ecst

Katamune, Y. ; Ohmagari, S. ; Setoyama, H. et al. / Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets. Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices. 20. ed. Electrochemical Society Inc., 2013. pp. 23-28 (ECS Transactions; 20).

@inproceedings{fdaa14c3203c4f32a41a787d67ecfc76,

title = "Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets",

abstract = "Boron-doped ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared by coaxial arc plasma deposition (CAPD) with boron-blended graphite target. Their growth was achieved at room temperature and a base pressure of less than 10?3 Pa (no inflow gas) owing to CAPD, whereas the growth of UNCD films by chemical vapor deposition generally requires high substrate temperatures of more than 700 °C and a hydrogen ambient gas. The formation of p-type conduction was confirmed thermally, namely Seebeck effect, and heterojunction diodes formed with n-type Si exhibited a typical rectifying action. It was demonstrated that CAPD is advantageous to the practical film formation including doping.",

author = "Y. Katamune and S. Ohmagari and H. Setoyama and K. Sumitani and Y. Hirai and T. Yoshitake",

year = "2013",

doi = "10.1149/05020.0023ecst",

language = "English",

isbn = "9781607684015",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "20",

pages = "23--28",

booktitle = "Carbon Nanotubes and Graphene",

edition = "20",

note = "Symposium on Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices - 222nd ECS Meeting/PRiME 2012 ; Conference date: 07-10-2012 Through 12-10-2012",

}

TY - GEN

T1 - Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets

AU - Katamune, Y.

AU - Ohmagari, S.

AU - Setoyama, H.

AU - Sumitani, K.

AU - Hirai, Y.

AU - Yoshitake, T.

PY - 2013

Y1 - 2013

N2 - Boron-doped ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared by coaxial arc plasma deposition (CAPD) with boron-blended graphite target. Their growth was achieved at room temperature and a base pressure of less than 10?3 Pa (no inflow gas) owing to CAPD, whereas the growth of UNCD films by chemical vapor deposition generally requires high substrate temperatures of more than 700 °C and a hydrogen ambient gas. The formation of p-type conduction was confirmed thermally, namely Seebeck effect, and heterojunction diodes formed with n-type Si exhibited a typical rectifying action. It was demonstrated that CAPD is advantageous to the practical film formation including doping.

AB - Boron-doped ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were prepared by coaxial arc plasma deposition (CAPD) with boron-blended graphite target. Their growth was achieved at room temperature and a base pressure of less than 10?3 Pa (no inflow gas) owing to CAPD, whereas the growth of UNCD films by chemical vapor deposition generally requires high substrate temperatures of more than 700 °C and a hydrogen ambient gas. The formation of p-type conduction was confirmed thermally, namely Seebeck effect, and heterojunction diodes formed with n-type Si exhibited a typical rectifying action. It was demonstrated that CAPD is advantageous to the practical film formation including doping.

UR - http://www.scopus.com/inward/record.url?scp=84885717231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885717231&partnerID=8YFLogxK

U2 - 10.1149/05020.0023ecst

DO - 10.1149/05020.0023ecst

M3 - Conference contribution

AN - SCOPUS:84885717231

SN - 9781607684015

T3 - ECS Transactions

SP - 23

EP - 28

BT - Carbon Nanotubes and Graphene

PB - Electrochemical Society Inc.

T2 - Symposium on Carbon Nanotubes and Graphene: From Fundamental Properties and Processes to Applications and Devices - 222nd ECS Meeting/PRiME 2012

Y2 - 7 October 2012 through 12 October 2012

ER -

Formation of p-type ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition with boron- Incorporated graphite targets

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this