Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

Shun Ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami, Tanaka Satoru, Nobuaki Teraguchi, Akira Suzuki

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

Step bunching on 6H-SiC (0001)-vicinal face etched by HCl at 1300-1500 °C is investigated by atomic force microscopy. When the substrate has the inclination toward near 〈0110〉 or even 〈1120〉, continuous parallel and periodic microsteps with six-bilayer height are laid perpendicular to the off direction, although those perpendicular to 〈1120〉 are apt to decompose into three bilayer or less. Formation mechanism of unit-cell-height steps is discussed based on consideration of bond configuration at step edges.

Original languageEnglish
Pages (from-to)3412-3414
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number23
DOIs
Publication statusPublished - Jun 5 2000

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etching
cells
bunching
inclination
atomic force microscopy
configurations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching. / Nakamura, Shun Ichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Satoru, Tanaka; Teraguchi, Nobuaki; Suzuki, Akira.

In: Applied Physics Letters, Vol. 76, No. 23, 05.06.2000, p. 3412-3414.

Research output: Contribution to journalArticle

Nakamura, SI, Kimoto, T, Matsunami, H, Satoru, T, Teraguchi, N & Suzuki, A 2000, 'Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching', Applied Physics Letters, vol. 76, no. 23, pp. 3412-3414. https://doi.org/10.1063/1.126663
Nakamura, Shun Ichi ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki ; Satoru, Tanaka ; Teraguchi, Nobuaki ; Suzuki, Akira. / Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching. In: Applied Physics Letters. 2000 ; Vol. 76, No. 23. pp. 3412-3414.
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