フレキシブルエレクトロニクス創成に向けた金誘起層交換成長法による擬似単結晶Ge/プラスチックの形成 (シリコン材料・デバイス)

Translated title of the contribution: Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth

朴 鍾爀, 宮尾 正信, 佐道 泰造

Research output: Contribution to journalArticle

Abstract

Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.
Translated title of the contributionFormation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth
Original languageJapanese
Pages (from-to)17-20
Number of pages4
JournalIEICE technical report
Volume114
Issue number1
Publication statusPublished - Apr 10 2014

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