Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A low-temperature (≤250oC) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (111)-or (100)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages291-294
Number of pages4
ISBN (Print)9784863483958
DOIs
Publication statusPublished - Jan 1 2014
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: Jul 2 2014Jul 4 2014

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
CountryJapan
CityKyoto
Period7/2/147/4/14

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Park, J. H., Miyao, M., & Sadoh, T. (2014). Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 291-294). [6867200] (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867200