Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A low-temperature (≤250oC) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (111)-or (100)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages291-294
Number of pages4
ISBN (Print)9784863483958
DOIs
Publication statusPublished - Jan 1 2014
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: Jul 2 2014Jul 4 2014

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
CountryJapan
CityKyoto
Period7/2/147/4/14

Fingerprint

Flexible electronics
Nucleation
Single crystals
Plastics
Interdiffusion (solids)
Crystals
Crystallization
Modulation
Thin films
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Park, J. H., Miyao, M., & Sadoh, T. (2014). Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 291-294). [6867200] (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). IEEE Computer Society. https://doi.org/10.1109/AM-FPD.2014.6867200

Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. / Park, Jong Hyeok; Miyao, Masanobu; Sadoh, Taizoh.

Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. p. 291-294 6867200 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, JH, Miyao, M & Sadoh, T 2014, Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. in Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 6867200, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, IEEE Computer Society, pp. 291-294, 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, Kyoto, Japan, 7/2/14. https://doi.org/10.1109/AM-FPD.2014.6867200
Park JH, Miyao M, Sadoh T. Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. In Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society. 2014. p. 291-294. 6867200. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). https://doi.org/10.1109/AM-FPD.2014.6867200
Park, Jong Hyeok ; Miyao, Masanobu ; Sadoh, Taizoh. / Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics. Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, 2014. pp. 291-294 (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).
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