Abstract
A simple method of producing aligned carbon nanotube films and a mechanism for their formation are described. The alignment method is based on the self-organization by surface decomposition of a SiC wafer in a vacuum at a temperature between 1500 and 1700° C. From the results of cross-sectional observations by high-resolution transmission electron microscopy and analytical electron microscopy, the following formation mechanism is proposed: SiO gas molecules are generated by surface oxidation and graphite caps of 2-5 nm in size are formed by the bubbling of SiO gas on the surface, characterized by a (0001)SiC plane. Then carbon nanotubes grow in a vertical direction, eroding the SiC crystal during the continuous oxidation.
| Original language | English |
|---|---|
| Pages (from-to) | 153-161 |
| Number of pages | 9 |
| Journal | Philosophical Magazine Letters |
| Volume | 79 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 1999 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Kusunoki, M., Suzuki, T., Kaneko, K., & Ito, M. (1999). Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide. Philosophical Magazine Letters, 79(4), 153-161. https://doi.org/10.1080/095008399177381