TY - JOUR
T1 - Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide
AU - Kusunoki, M.
AU - Suzuki, T.
AU - Kaneko, K.
AU - Ito, M.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/4
Y1 - 1999/4
N2 - A simple method of producing aligned carbon nanotube films and a mechanism for their formation are described. The alignment method is based on the self-organization by surface decomposition of a SiC wafer in a vacuum at a temperature between 1500 and 1700° C. From the results of cross-sectional observations by high-resolution transmission electron microscopy and analytical electron microscopy, the following formation mechanism is proposed: SiO gas molecules are generated by surface oxidation and graphite caps of 2-5 nm in size are formed by the bubbling of SiO gas on the surface, characterized by a (0001)SiC plane. Then carbon nanotubes grow in a vertical direction, eroding the SiC crystal during the continuous oxidation.
AB - A simple method of producing aligned carbon nanotube films and a mechanism for their formation are described. The alignment method is based on the self-organization by surface decomposition of a SiC wafer in a vacuum at a temperature between 1500 and 1700° C. From the results of cross-sectional observations by high-resolution transmission electron microscopy and analytical electron microscopy, the following formation mechanism is proposed: SiO gas molecules are generated by surface oxidation and graphite caps of 2-5 nm in size are formed by the bubbling of SiO gas on the surface, characterized by a (0001)SiC plane. Then carbon nanotubes grow in a vertical direction, eroding the SiC crystal during the continuous oxidation.
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U2 - 10.1080/095008399177381
DO - 10.1080/095008399177381
M3 - Article
AN - SCOPUS:0032683519
VL - 79
SP - 153
EP - 161
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
SN - 0950-0839
IS - 4
ER -