Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers

T. Sadoh, M. Owatari, Y. Murakami, A. Kenjo, T. Yoshitake, M. Itakura, T. Enokida, M. Miyao

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Abstract

Growth of SiGe/β-FeSi2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi2 by Ge doping. The [a-SiGe/β-FeSi 2(Ge)]n multi-layered structures were formed after annealing at 700°C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi2(Ge) was strained by 0.4-0.5% for the sample with n=1. The strains decreased with increasing n, which was due to that the segregation of the Ge atoms from the a-Fe0.4Si 0.5Ge0.1 layers to the a-Si layers became large with increasing n. After annealing at 800°C, agglomeration of β-FeSi 2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These demonstrate that the SiGe/β-FeSi2 superstructures were formed by the Ge segregation. These new structures are useful for formation of opto-electrical devices.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalThin Solid Films
Volume461
Issue number1
DOIs
Publication statusPublished - Aug 2 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: Oct 8 2003Oct 13 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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