Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers

Taizoh Sadoh, M. Owatari, Y. Murakami, A. Kenjo, Tsuyoshi Yoshitake, Masaru Itakura, T. Enokida, M. Miyao

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Growth of SiGe/β-FeSi2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi2 by Ge doping. The [a-SiGe/β-FeSi 2(Ge)]n multi-layered structures were formed after annealing at 700°C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi2(Ge) was strained by 0.4-0.5% for the sample with n=1. The strains decreased with increasing n, which was due to that the segregation of the Ge atoms from the a-Fe0.4Si 0.5Ge0.1 layers to the a-Si layers became large with increasing n. After annealing at 800°C, agglomeration of β-FeSi 2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These demonstrate that the SiGe/β-FeSi2 superstructures were formed by the Ge segregation. These new structures are useful for formation of opto-electrical devices.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalThin Solid Films
Volume461
Issue number1
DOIs
Publication statusPublished - Aug 2 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: Oct 8 2003Oct 13 2003

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Annealing
annealing
agglomeration
Nanocrystals
nanocrystals
Agglomeration
Doping (additives)
X ray diffraction
Atoms
diffraction
atoms
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers. / Sadoh, Taizoh; Owatari, M.; Murakami, Y.; Kenjo, A.; Yoshitake, Tsuyoshi; Itakura, Masaru; Enokida, T.; Miyao, M.

In: Thin Solid Films, Vol. 461, No. 1, 02.08.2004, p. 77-80.

Research output: Contribution to journalConference article

Sadoh, Taizoh ; Owatari, M. ; Murakami, Y. ; Kenjo, A. ; Yoshitake, Tsuyoshi ; Itakura, Masaru ; Enokida, T. ; Miyao, M. / Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers. In: Thin Solid Films. 2004 ; Vol. 461, No. 1. pp. 77-80.
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AU - Kenjo, A.

AU - Yoshitake, Tsuyoshi

AU - Itakura, Masaru

AU - Enokida, T.

AU - Miyao, M.

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N2 - Growth of SiGe/β-FeSi2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi2 by Ge doping. The [a-SiGe/β-FeSi 2(Ge)]n multi-layered structures were formed after annealing at 700°C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi2(Ge) was strained by 0.4-0.5% for the sample with n=1. The strains decreased with increasing n, which was due to that the segregation of the Ge atoms from the a-Fe0.4Si 0.5Ge0.1 layers to the a-Si layers became large with increasing n. After annealing at 800°C, agglomeration of β-FeSi 2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These demonstrate that the SiGe/β-FeSi2 superstructures were formed by the Ge segregation. These new structures are useful for formation of opto-electrical devices.

AB - Growth of SiGe/β-FeSi2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi2 by Ge doping. The [a-SiGe/β-FeSi 2(Ge)]n multi-layered structures were formed after annealing at 700°C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi2(Ge) was strained by 0.4-0.5% for the sample with n=1. The strains decreased with increasing n, which was due to that the segregation of the Ge atoms from the a-Fe0.4Si 0.5Ge0.1 layers to the a-Si layers became large with increasing n. After annealing at 800°C, agglomeration of β-FeSi 2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These demonstrate that the SiGe/β-FeSi2 superstructures were formed by the Ge segregation. These new structures are useful for formation of opto-electrical devices.

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