Formation of silicon nanodots from dysprosium-doped amorphous SiC x O y films grown by hot-filament assisted chemical vapor deposition of CH 3 SiH 3 and Dy(DPM) 3 gas jets

Yoshifumi Ikoma, Takayoshi Masaki, Shinji Kawai, Teruaki Motooka

Research output: Contribution to journalArticle


We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .

Original languageEnglish
Pages (from-to)8657-8660
Number of pages4
JournalApplied Surface Science
Issue number21
Publication statusPublished - Aug 31 2007


All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

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