Formation of silicon nanodots from dysprosium-doped amorphous SiC                         x                         O                         y                          films grown by hot-filament assisted chemical vapor deposition of CH                         3                         SiH                         3                          and Dy(DPM)                         3                          gas jets

Yoshifumi Ikoma; Takayoshi Masaki; Shinji Kawai; Teruaki Motooka

doi:10.1016/j.apsusc.2007.04.046

Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets

Yoshifumi Ikoma, Takayoshi Masaki, Shinji Kawai, Teruaki Motooka

Advanced Materials Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC _x O _y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO ₂ .

Original language	English
Pages (from-to)	8657-8660
Number of pages	4
Journal	Applied Surface Science
Volume	253
Issue number	21
DOIs	https://doi.org/10.1016/j.apsusc.2007.04.046
Publication status	Published - Aug 31 2007

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films

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10.1016/j.apsusc.2007.04.046

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Ikoma, Y., Masaki, T., Kawai, S., & Motooka, T. (2007). Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets Applied Surface Science, 253(21), 8657-8660. https://doi.org/10.1016/j.apsusc.2007.04.046

Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets . / Ikoma, Yoshifumi; Masaki, Takayoshi; Kawai, Shinji; Motooka, Teruaki.

In: Applied Surface Science, Vol. 253, No. 21, 31.08.2007, p. 8657-8660.

Research output: Contribution to journal › Article › peer-review

Ikoma, Y, Masaki, T, Kawai, S & Motooka, T 2007, ' Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets ', Applied Surface Science, vol. 253, no. 21, pp. 8657-8660. https://doi.org/10.1016/j.apsusc.2007.04.046

Ikoma Y, Masaki T, Kawai S, Motooka T. Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets Applied Surface Science. 2007 Aug 31;253(21):8657-8660. https://doi.org/10.1016/j.apsusc.2007.04.046

Ikoma, Yoshifumi ; Masaki, Takayoshi ; Kawai, Shinji ; Motooka, Teruaki. / Formation of silicon nanodots from dysprosium-doped amorphous SiC _x O _y films grown by hot-filament assisted chemical vapor deposition of CH ₃ SiH ₃ and Dy(DPM) ₃ gas jets In: Applied Surface Science. 2007 ; Vol. 253, No. 21. pp. 8657-8660.

@article{8163cb7e54ee49e4a97053645a7693db,

title = " Formation of silicon nanodots from dysprosium-doped amorphous SiC x O y films grown by hot-filament assisted chemical vapor deposition of CH 3 SiH 3 and Dy(DPM) 3 gas jets ",

abstract = " We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .",

author = "Yoshifumi Ikoma and Takayoshi Masaki and Shinji Kawai and Teruaki Motooka",

year = "2007",

month = aug,

day = "31",

doi = "10.1016/j.apsusc.2007.04.046",

language = "English",

volume = "253",

pages = "8657--8660",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "21",

}

TY - JOUR

T1 - Formation of silicon nanodots from dysprosium-doped amorphous SiC x O y films grown by hot-filament assisted chemical vapor deposition of CH 3 SiH 3 and Dy(DPM) 3 gas jets

AU - Ikoma, Yoshifumi

AU - Masaki, Takayoshi

AU - Kawai, Shinji

AU - Motooka, Teruaki

PY - 2007/8/31

Y1 - 2007/8/31

N2 - We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .

AB - We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH 3 SiH 3 and Dy(DPM) 3 gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC x O y ) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO 2 .

UR - http://www.scopus.com/inward/record.url?scp=34547219356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547219356&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2007.04.046

DO - 10.1016/j.apsusc.2007.04.046

M3 - Article

AN - SCOPUS:34547219356

VL - 253

SP - 8657

EP - 8660

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 21

ER -