Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy

Kaoru Toko; Takanori Tanaka; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2009.10.083

Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy

Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm²/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.

Original language	English
Journal	Thin Solid Films
Volume	518
Issue number	6 SUPPL. 1
DOIs	https://doi.org/10.1016/j.tsf.2009.10.083
Publication status	Published - Jan 1 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Toko, K., Tanaka, T., Sadoh, T., & Miyao, M. (2010). Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy. Thin Solid Films, 518(6 SUPPL. 1). https://doi.org/10.1016/j.tsf.2009.10.083

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