TY - JOUR
T1 - Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy
AU - Toko, Kaoru
AU - Tanaka, Takanori
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by Semiconductor Technology Academic Research Center (STARC). The authors wish to thank Dr. I. Mizushima, Dr. N. Tamura, and Dr. M. Yoshimaru of STARC for their helpful discussions in the course of this study. Valuable comment by Dr. K. Hamaya of Kyushu University is greatly appreciated.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
AB - A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
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U2 - 10.1016/j.tsf.2009.10.083
DO - 10.1016/j.tsf.2009.10.083
M3 - Article
AN - SCOPUS:73649103119
VL - 518
SP - S179-S181
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 6 SUPPL. 1
ER -