Abstract
A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
| Original language | English |
|---|---|
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 6 SUPPL. 1 |
| DOIs | |
| Publication status | Published - Jan 1 2010 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy. / Toko, Kaoru; Tanaka, Takanori; Sadoh, Taizoh; Miyao, Masanobu.
In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy
AU - Toko, Kaoru
AU - Tanaka, Takanori
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2010/1/1
Y1 - 2010/1/1
N2 - A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
AB - A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.
UR - http://www.scopus.com/inward/record.url?scp=73649103119&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=73649103119&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.10.083
DO - 10.1016/j.tsf.2009.10.083
M3 - Article
VL - 518
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 6 SUPPL. 1
ER -