Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy

Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

Fingerprint

Liquid phase epitaxy
Quartz
Carrier mobility
liquid phase epitaxy
carrier mobility
quartz
Crystalline materials
Substrates
Thin film transistors
Seed
seeds
Melting
transistors
melting
Single crystals
single crystals
thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy. / Toko, Kaoru; Tanaka, Takanori; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010.

Research output: Contribution to journalArticle

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