Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy

Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A rapid melting growth technique of amorphous Ge has been developed by using polycrystalline Si islands as growth-seed. High quality single-crystal Ge stripes with 400 μm length, dominantly (100) oriented, are obtained on quartz substrate, which provides a high carrier mobility of 1040 cm2/Vs. This technique is expected to be useful to realize Ge-channel thin film transistors with high carrier mobility.

Original languageEnglish
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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