Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Yosuke Watanabe, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the formation of SiO2 thin films on polycrystalline silicon thin films by CO2 laser irradiation of perhydropolysilazane. We succeeded in the formation of SiO2 containing few OH groups and having uniform composition in the thickness direction. We considered the effect of CO2 laser irradiation was related to bond vibration.

Original languageEnglish
Title of host publication20th International Display Workshops 2013, IDW 2013
PublisherInternational Display Workshops
Pages419-422
Number of pages4
ISBN (Electronic)9781510827783
Publication statusPublished - Jan 1 2013
Event20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan
Duration: Dec 3 2013Dec 6 2013

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other20th International Display Workshops 2013, IDW 2013
CountryJapan
CitySapporo
Period12/3/1312/6/13

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Hishitani, D., Horita, M., Ishikawa, Y., Watanabe, Y., Ikenoue, H., & Uraoka, Y. (2013). Formation of SiO2 thin films on polycrystalline silicon thin films from polysilazane solution by CO2 laser annealing. In 20th International Display Workshops 2013, IDW 2013 (pp. 419-422). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.