We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials