Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

Ryota Ohtani; Yoshifumi Ikoma; Teruaki Motooka

doi:10.1557/proc-815-j5.11

Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH₃SiH₃-gas source free jet

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p⁺Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH₃SiH₃. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	815
DOIs	https://doi.org/10.1557/proc-815-j5.11
Publication status	Published - 2004
Event	Silicon Carbide 2004 - Materials, Processing and Devices - San Francisco, CA, United States Duration: Apr 14 2004 → Apr 15 2004

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet",

abstract = "We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.",

author = "Ryota Ohtani and Yoshifumi Ikoma and Teruaki Motooka",

year = "2004",

doi = "10.1557/proc-815-j5.11",

language = "English",

volume = "815",

pages = "83--88",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Silicon Carbide 2004 - Materials, Processing and Devices ; Conference date: 14-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

AU - Ohtani, Ryota

AU - Ikoma, Yoshifumi

AU - Motooka, Teruaki

PY - 2004

Y1 - 2004

N2 - We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

AB - We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH3SiH3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

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U2 - 10.1557/proc-815-j5.11

DO - 10.1557/proc-815-j5.11

M3 - Conference article

AN - SCOPUS:12844261188

SN - 0272-9172

VL - 815

SP - 83

EP - 88

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Silicon Carbide 2004 - Materials, Processing and Devices

Y2 - 14 April 2004 through 15 April 2004

ER -

Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH₃SiH₃-gas source free jet

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