We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - Apr 7 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)