Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

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    2 Citations (Scopus)


    We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

    Original languageEnglish
    Pages (from-to)2514-2515
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number4 A
    Publication statusPublished - Apr 7 2006

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)


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