Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

Ryota Ohtani, Yoshifumi Ikoma, Teruaki Motooka

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2 Citations (Scopus)

Abstract

We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

Original languageEnglish
Pages (from-to)2514-2515
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 A
DOIs
Publication statusPublished - Apr 7 2006

Fingerprint

gas jets
Heterojunctions
Chemical vapor deposition
filaments
vapor deposition
Substrates
Gases
Tungsten
Multilayers
Irradiation
Thin films
tungsten
methylidyne
irradiation
thin films
gases
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition",
abstract = "We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.",
author = "Ryota Ohtani and Yoshifumi Ikoma and Teruaki Motooka",
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T1 - Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

AU - Ohtani, Ryota

AU - Ikoma, Yoshifumi

AU - Motooka, Teruaki

PY - 2006/4/7

Y1 - 2006/4/7

N2 - We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

AB - We investigated the formation of Si/SiC heterostructures on Si(100) substrates by means of hot-filament-assisted molecular jet chemical vapor deposition using single gas source CH3SiH3. SiC films were epitaxially grown on Si(100) at the substrate temperature of 850°C. It was found that polycrystalline Si was successfully deposited on the SiC thin films on Si(100) at 850°C with the assistance of a tungsten hot-filament at ∼1800°C. These results imply that SiC/Si multilayer growth can be achieved by simply turning on and off the hot filament during the CH 3SiH3 jet irradiation.

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