FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.

K. Tsutsui; H. C. Lee; H. Ishiwara; T. Asano; S. Furukawa

FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.

K. Tsutsui, H. C. Lee, H. Ishiwara, T. Asano, S. Furukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAs/Ca//0//. //4//3Sr//0//. //5//7F//2/GaAs ((100) and ( OVER BAR 1 OVER BAR 1 OVER BAR 1)) SOI structures were fabricated by using MBE growth. The SOI-GaAs layers were investigated by He ion channeling and backscattering spectroscopy (RBS) and Nomarski optical microscope. It was found that the temperature dependences of the crystalline quality and the surface morphology were different between the layers on (100) and OVER BAR 1 OVER BAR 1 OVER BAR 1) substrates. The channeling minimum yield ( chi //m//i//n) of 5. 5% was obtained in a layer grown on the ( OVER BAR 1 OVER BAR 1 OVER BAR 1) substrate using a two-step growth technique.

Original language	English
Title of host publication	Institute of Physics Conference Series
Pages	109-114
Number of pages	6
Edition	79
Publication status	Published - Dec 1 1986
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	79
ISSN (Print)	0373-0751

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

@inproceedings{52fe49b1d10c476496b03c1b03a7e243,

title = "FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.",

abstract = "GaAs/Ca//0//. //4//3Sr//0//. //5//7F//2/GaAs ((100) and ( OVER BAR 1 OVER BAR 1 OVER BAR 1)) SOI structures were fabricated by using MBE growth. The SOI-GaAs layers were investigated by He ion channeling and backscattering spectroscopy (RBS) and Nomarski optical microscope. It was found that the temperature dependences of the crystalline quality and the surface morphology were different between the layers on (100) and OVER BAR 1 OVER BAR 1 OVER BAR 1) substrates. The channeling minimum yield ( chi //m//i//n) of 5. 5% was obtained in a layer grown on the ( OVER BAR 1 OVER BAR 1 OVER BAR 1) substrate using a two-step growth technique.",

author = "K. Tsutsui and Lee, {H. C.} and H. Ishiwara and T. Asano and S. Furukawa",

year = "1986",

month = dec,

day = "1",

language = "English",

isbn = "0854981705",

series = "Institute of Physics Conference Series",

number = "79",

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TY - GEN

T1 - FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.

AU - Tsutsui, K.

AU - Lee, H. C.

AU - Ishiwara, H.

AU - Asano, T.

AU - Furukawa, S.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - GaAs/Ca//0//. //4//3Sr//0//. //5//7F//2/GaAs ((100) and ( OVER BAR 1 OVER BAR 1 OVER BAR 1)) SOI structures were fabricated by using MBE growth. The SOI-GaAs layers were investigated by He ion channeling and backscattering spectroscopy (RBS) and Nomarski optical microscope. It was found that the temperature dependences of the crystalline quality and the surface morphology were different between the layers on (100) and OVER BAR 1 OVER BAR 1 OVER BAR 1) substrates. The channeling minimum yield ( chi //m//i//n) of 5. 5% was obtained in a layer grown on the ( OVER BAR 1 OVER BAR 1 OVER BAR 1) substrate using a two-step growth technique.

AB - GaAs/Ca//0//. //4//3Sr//0//. //5//7F//2/GaAs ((100) and ( OVER BAR 1 OVER BAR 1 OVER BAR 1)) SOI structures were fabricated by using MBE growth. The SOI-GaAs layers were investigated by He ion channeling and backscattering spectroscopy (RBS) and Nomarski optical microscope. It was found that the temperature dependences of the crystalline quality and the surface morphology were different between the layers on (100) and OVER BAR 1 OVER BAR 1 OVER BAR 1) substrates. The channeling minimum yield ( chi //m//i//n) of 5. 5% was obtained in a layer grown on the ( OVER BAR 1 OVER BAR 1 OVER BAR 1) substrate using a two-step growth technique.

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M3 - Conference contribution

AN - SCOPUS:0023030215

SN - 0854981705

T3 - Institute of Physics Conference Series

SP - 109

EP - 114

BT - Institute of Physics Conference Series

ER -

FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.

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