FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES.

K. Tsutsui, H. C. Lee, H. Ishiwara, T. Asano, S. Furukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

GaAs/Ca//0//. //4//3Sr//0//. //5//7F//2/GaAs ((100) and ( OVER BAR 1 OVER BAR 1 OVER BAR 1)) SOI structures were fabricated by using MBE growth. The SOI-GaAs layers were investigated by He ion channeling and backscattering spectroscopy (RBS) and Nomarski optical microscope. It was found that the temperature dependences of the crystalline quality and the surface morphology were different between the layers on (100) and OVER BAR 1 OVER BAR 1 OVER BAR 1) substrates. The channeling minimum yield ( chi //m//i//n) of 5. 5% was obtained in a layer grown on the ( OVER BAR 1 OVER BAR 1 OVER BAR 1) substrate using a two-step growth technique.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages109-114
Number of pages6
Edition79
Publication statusPublished - Dec 1 1986

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tsutsui, K., Lee, H. C., Ishiwara, H., Asano, T., & Furukawa, S. (1986). FORMATION OF SOI-GaAs on (Ca,Sr) F//2GaAs STRUCTURES. In Institute of Physics Conference Series (79 ed., pp. 109-114). (Institute of Physics Conference Series; No. 79).