Formation of solution-derived SiO2 thin films by CO2 laser annealing for polycrystalline silicon thin film transistors

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Yosuke Watanabe, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Formation of perhydropolysilazane based SiO2 film by CO2 laser annealing was investigated. Polycrystalline silicon thin film transistors with the SiO2 film as a gate insulator were fabricated. The TFT showed the field effect mobility of 27 cm2/vs and hysteresis shift of -0.11 V. We considered the cause of the hysteresis.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages261-262
Number of pages2
ISBN (Electronic)9781510827790
Publication statusPublished - Jan 1 2014
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: Dec 3 2014Dec 5 2014

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Other

Other21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period12/3/1412/5/14

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Hishitani, D., Horita, M., Ishikawa, Y., Watanabe, Y., Ikenoue, H., & Uraoka, Y. (2014). Formation of solution-derived SiO2 thin films by CO2 laser annealing for polycrystalline silicon thin film transistors. In 21st International Display Workshops 2014, IDW 2014 (pp. 261-262). (21st International Display Workshops 2014, IDW 2014; Vol. 1). Society for Information Display.