FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION.

Tanemasa Asano, Rosen D. Atanassov, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

Abstract

The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalJapanese Journal of Applied Physics
Volume20
Issue number5
Publication statusPublished - May 1 1981
Externally publishedYes

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implantation
electrical resistivity
Oxygen
oxygen
Deep level transient spectroscopy
Protons
protons
trapping
traps
Annealing
annealing
profiles

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION. / Asano, Tanemasa; Atanassov, Rosen D.; Ishiwara, Hiroshi; Furukawa, Seijiro.

In: Japanese Journal of Applied Physics, Vol. 20, No. 5, 01.05.1981, p. 901-907.

Research output: Contribution to journalArticle

Asano, T, Atanassov, RD, Ishiwara, H & Furukawa, S 1981, 'FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION.', Japanese Journal of Applied Physics, vol. 20, no. 5, pp. 901-907.
Asano, Tanemasa ; Atanassov, Rosen D. ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION. In: Japanese Journal of Applied Physics. 1981 ; Vol. 20, No. 5. pp. 901-907.
@article{1a10100f31c44c05936b3eafdb669bcd,
title = "FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION.",
abstract = "The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.",
author = "Tanemasa Asano and Atanassov, {Rosen D.} and Hiroshi Ishiwara and Seijiro Furukawa",
year = "1981",
month = "5",
day = "1",
language = "English",
volume = "20",
pages = "901--907",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "5",

}

TY - JOUR

T1 - FORMATION OF THICK, THERMALLY-STABLE HIGH-RESISTIVITY-LAYERS IN GaAs BY OXYGEN ION IMPLANTATION.

AU - Asano, Tanemasa

AU - Atanassov, Rosen D.

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

PY - 1981/5/1

Y1 - 1981/5/1

N2 - The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

AB - The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800 degree C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800 degree C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

UR - http://www.scopus.com/inward/record.url?scp=0019560376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019560376&partnerID=8YFLogxK

M3 - Article

VL - 20

SP - 901

EP - 907

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5

ER -