Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Tanemasa Asano, Rosen D. Atanassov, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The channeling implantation of oxygen into n-type GaAs has been studied in order to form thick and thermally stable high-resistivity-layers. Carrier removal profiles and deep trapping levels are measured by the C-V and DLTS techniques in both oxygen- and proton-implanted layers. The C-V measurements show that the carrier removal by oxygen implantation is stable at least up to 800°C, and the DLTS measurements show that two trap levels exist in oxygen-implanted layers after annealing at 800°C while only one level is observable in unimplanted and proton-implanted layers. It is demonstrated that the carrier removal depth by the oxygen channeling implantation is about twice as deep as that by conventional random implantation.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalJapanese Journal of Applied Physics
Volume20
Issue number5
DOIs
Publication statusPublished - May 1981

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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