TY - JOUR
T1 - Formation of V2O3 nanocrystals by thermal reduction of V2O5 thin films
AU - Ramana, C. V.
AU - Utsunomiya, S.
AU - Ewing, R. C.
AU - Becker, U.
N1 - Funding Information:
The authors acknowledge the support of the National Science Foundation for research in nanoscale materials (NIRT, EAR-0403732).
PY - 2006/3
Y1 - 2006/3
N2 - We report the formation of homogeneous and stable V2O 3 nanocrystals, directly from V2O5 thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V2O5 thin films in vacuum is remarkably different when compared to reduction of V2O 5 single crystals and results in the formation of nanophase V 2O3. Thermally grown V2O3 nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.
AB - We report the formation of homogeneous and stable V2O 3 nanocrystals, directly from V2O5 thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V2O5 thin films in vacuum is remarkably different when compared to reduction of V2O 5 single crystals and results in the formation of nanophase V 2O3. Thermally grown V2O3 nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.
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U2 - 10.1016/j.ssc.2006.01.026
DO - 10.1016/j.ssc.2006.01.026
M3 - Article
AN - SCOPUS:33644765845
SN - 0038-1098
VL - 137
SP - 645
EP - 649
JO - Solid State Communications
JF - Solid State Communications
IS - 12
ER -