Formation process of CuCl nano-particles in silica glass by ion implantation

K. Fukumi; A. Chayahara; H. Kageyama; K. Kadono; T. Akai; N. Kitamura; H. Mizoguchi; Y. Horino; M. Makihara; K. Fujii; J. Hayakawa

doi:10.1016/S0022-3093(99)00526-8

Formation process of CuCl nano-particles in silica glass by ion implantation

K. Fukumi, A. Chayahara, H. Kageyama, K. Kadono, T. Akai, N. Kitamura, H. Mizoguchi, Y. Horino, M. Makihara, K. Fujii, J. Hayakawa

Research Center for Hydrogen Industrial Use and Storage

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

The formation process of CuCl crystals has been studied in (3 MeV 6×10¹⁶ Cl²⁺ ions/cm²+3 MeV 6×10¹⁶ Cu²⁺ ions/cm²)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.

Original language	English
Pages (from-to)	93-99
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	259
Issue number	1-3
DOIs	https://doi.org/10.1016/S0022-3093(99)00526-8
Publication status	Published - Nov 2 1999
Event	Proceedings of the 1998 Symposium on Advances in Photonic Glasses - Kyongju, Korea Duration: Sept 20 1998 → Sept 23 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(99)00526-8

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title = "Formation process of CuCl nano-particles in silica glass by ion implantation",

abstract = "The formation process of CuCl crystals has been studied in (3 MeV 6×1016 Cl2+ ions/cm2+3 MeV 6×1016 Cu2+ ions/cm2)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.",

author = "K. Fukumi and A. Chayahara and H. Kageyama and K. Kadono and T. Akai and N. Kitamura and H. Mizoguchi and Y. Horino and M. Makihara and K. Fujii and J. Hayakawa",

year = "1999",

month = nov,

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doi = "10.1016/S0022-3093(99)00526-8",

language = "English",

volume = "259",

pages = "93--99",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "1-3",

note = "Proceedings of the 1998 Symposium on Advances in Photonic Glasses ; Conference date: 20-09-1998 Through 23-09-1998",

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TY - JOUR

T1 - Formation process of CuCl nano-particles in silica glass by ion implantation

AU - Fukumi, K.

AU - Chayahara, A.

AU - Kageyama, H.

AU - Kadono, K.

AU - Akai, T.

AU - Kitamura, N.

AU - Mizoguchi, H.

AU - Horino, Y.

AU - Makihara, M.

AU - Fujii, K.

AU - Hayakawa, J.

PY - 1999/11/2

Y1 - 1999/11/2

N2 - The formation process of CuCl crystals has been studied in (3 MeV 6×1016 Cl2+ ions/cm2+3 MeV 6×1016 Cu2+ ions/cm2)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.

AB - The formation process of CuCl crystals has been studied in (3 MeV 6×1016 Cl2+ ions/cm2+3 MeV 6×1016 Cu2+ ions/cm2)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.

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U2 - 10.1016/S0022-3093(99)00526-8

DO - 10.1016/S0022-3093(99)00526-8

M3 - Conference article

AN - SCOPUS:0033323217

SN - 0022-3093

VL - 259

SP - 93

EP - 99

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

T2 - Proceedings of the 1998 Symposium on Advances in Photonic Glasses

Y2 - 20 September 1998 through 23 September 1998

ER -

Formation process of CuCl nano-particles in silica glass by ion implantation

Abstract

All Science Journal Classification (ASJC) codes

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