Formation process of CuCl nano-particles in silica glass by ion implantation

K. Fukumi, A. Chayahara, H. Kageyama, K. Kadono, T. Akai, N. Kitamura, H. Mizoguchi, Y. Horino, M. Makihara, K. Fujii, J. Hayakawa

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Abstract

The formation process of CuCl crystals has been studied in (3 MeV 6×1016 Cl2+ ions/cm2+3 MeV 6×1016 Cu2+ ions/cm2)-implanted silica glass by X-ray absorption spectroscopy and secondary ion mass spectroscopy. It was found from X-ray absorption spectroscopy that Cu atoms were mainly coordinated by oxygen atoms in as-implanted glass. Heat-treatment at 600 °C caused the formation of Cu-Cl bonds and heat-treatment at 1000 °C caused the formation of CuCl crystals in silica. It was deduced that the migration of Cl atoms is a rate-determining step for the formation of CuCl crystal, on the basis of the conventional precipitation model.

Original languageEnglish
Pages (from-to)93-99
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume259
Issue number1-3
DOIs
Publication statusPublished - Nov 2 1999
EventProceedings of the 1998 Symposium on Advances in Photonic Glasses - Kyongju, Korea
Duration: Sep 20 1998Sep 23 1998

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Fukumi, K., Chayahara, A., Kageyama, H., Kadono, K., Akai, T., Kitamura, N., ... Hayakawa, J. (1999). Formation process of CuCl nano-particles in silica glass by ion implantation. Journal of Non-Crystalline Solids, 259(1-3), 93-99. https://doi.org/10.1016/S0022-3093(99)00526-8